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MT41J256M16HA-093G:E

Name: MT41J256M16HA-093G:E
Rating: 4.7 (12 reviews)

IC DRAM 4GBIT PARALLEL 96FBGA

제조업체
Mfr.부분 #MT41J256M16HA-093G:E
패키지 96-TFBGA
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사양

Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR3
MemorySize	4Gb (256M x 16)
MemoryInterface	Parallel
ClockFrequency	1.066 GHz
AccessTime	20 ns
Voltage-Supply	1.425V ~ 1.575V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	96-TFBGA

개요

Description

MT41J256M16HA-093G:E is a Micron DDR3 SDRAM device. It is a 4 Gb (512 MB) memory die organized as 256M × 16 (16-bit wide I/O). The -093G part number indicates a specific speed grade (roughly around 933 MT/s) and the trailing :E typically denotes an extended-temperature/eco variant. Voltage varies by variant (DDR3 normally ~1.5 V; DDR3L ~1.35 V). DDR3 devices like this usually have multiple banks (commonly 8) and are used as a single die in a memory rank; several dies are combined to form higher-density DIMMs or SO-DIMMs. For exact timing, voltage, temperature range, and pinout, consult the official Micron datasheet for MT41J256M16HA-093G:E.

Features

MT41J256M16HA-093G:E is a Micron DDR3 SDRAM device. Key features:
- Capacity/organization: 4 Gbit total per device (256M x 16, 16-bit wide I/O)
- Architecture: DDR3 SDRAM, 8 banks, 8n prefetch, burst length 8
- Speed grade: up to DDR3-1066 MT/s; the -093G:E suffix indicates the 933 MT/s range (device dependent)
- Voltage: typically 1.5V (DDR3); E suffix indicates extended temperature variant (industrial range in some packages)
- Interface: unbuffered, non-ECC
- Suitable for use as a component in memory configurations (e.g., mobile/embedded systems) requiring a 16-bit data path
Note: exact timing/temperature ranges depend on the specific package/stepping; verify with the Micron datasheet for the precise variant.

Package

FBGA package (96-ball fine-pitch Ball Grid Array).

Pinout

- Pin count: 96-ball FBGA package
- Function: Micron MT41J256M16HA-093G:E is a DDR3 SDRAM memory device (4 Gbit per die, x16 data width) used as synchronous main memory.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- About the company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND/NOR flash). It is one of the world’s largest memory producers, headquartered in Boise, Idaho.

Application

MT41J256M16HA-093G:E is a 4Gb (512MB) DDR3L SDRAM (256M x 16, 1.35V). It is a low-power memory for mobile/embedded use. Application areas:
- notebooks/ultrabooks and tablets
- embedded boards and industrial equipment
- consumer electronics (set-top boxes, media players, digital cameras)
- networking gear and other low-power devices requiring DDR3L memory