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MT41J256M16HA-125:E
IC DRAM 4GBIT PARALLEL 96FBGA
- 제조업체
- Mfr.부분 #MT41J256M16HA-125:E
- 패키지
- 데이터시트
- 재고 있음3961
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Part Status | Obsolete |
| Base Product Number | MT41J256M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x14) |
| Packaging | Tray |
| Access Time | 13.75 ns |
개요
Description
This memory chip is typically used in applications such as computers, servers, and networking equipment, where reliable and efficient memory performance is critical. It has a standard x8 or x16 organization and operates at a voltage of 1.5V. The package options and configurations support a wide range of system designs, making it versatile for different computing needs. The device also includes various features for power management and data integrity, further enhancing its usability in modern electronic systems.
Features
1. Density: 256 Megabits (32 Megabytes) per chip.
2. Organization: 16M x 16 bit configuration.
3. Data Rate: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Access Time: Offers low latency with a CAS latency of 11.
5. Voltage: Operates at a supply voltage of 1.5V (±0.075V).
6. Temperature Range: Suitable for commercial temperature ranges (0 to 85°C).
7. Packaging: Available in a 78-ball TFBGA package.
8. Features: Includes features like burst mode, on-die termination (ODT), and self-refresh capability.
This memory chip is commonly used in applications like consumer electronics, laptops, and other devices requiring efficient and reliable memory solutions.
Package
Pinout
Key functions of the MT41J256M16HA-125:E include:
- Data Storage: It offers a capacity of 4GB (256M x 16 bits).
- High-Speed Operation: Supports data rates up to 1600 MT/s.
- Low Power Consumption: Designed for energy efficiency, reducing overall power usage in devices.
- Burst Mode: Enables high-speed data transfers by allowing multiple data bits to be read or written in succession.
The device is commonly used in consumer electronics, computing systems, and other applications requiring reliable and fast memory performance.
Manufacturer
Application
Equivalent
1. Hynix H5TQ2G83BFR (DDR3, 2Gb)
2. Samsung K4B4G1646F (DDR3, 2Gb)
3. Micron MT41J256M16HA-15 (DDR3, 2Gb with different speed)
4. Nanya NT5CB256M16DP (DDR3, 2Gb)
Always verify compatibility with specific requirements and configurations.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
지불 기간은 100% 사전 지불입니다.
현재, 우리는 아래 지불 방법만 받아들입니다.:
1. PayPal
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