이미지는 참조용만

MT41J64M16JT-125:G

Name: MT41J64M16JT-125:G
Rating: 4.7 (12 reviews)

IC DRAM 1GBIT PARALLEL 96FBGA

제조업체
Mfr.부분 #MT41J64M16JT-125:G
패키지
데이터시트 MT41J64M16JT-125:G DataSheet
재고 있음2723

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Part Status	Obsolete
Base Product Number	MT41J64M16
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3
Memory Size	1Gbit
Memory Organization	64M x 16
Memory Interface	Parallel
Clock Frequency	800 MHz
Voltage - Supply	1.425V ~ 1.575V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	96-TFBGA
Supplier Device Package	96-FBGA (8x14)
Packaging	Tray

개요

Description

The MT41J64M16JT-125:G is a DRAM chip from Micron Technology, part of their DDR3 SDRAM lineup. This specific model is organized as 64 Meg x 16 bits, totaling 1 Gigabit of memory. It operates at a clock speed of 1600 MT/s (megatransfers per second) with a CL (CAS Latency) of 11, making it suitable for high-speed data applications. The "JT" indicates a standard temperature range, while the "125:G" specifies the package type and timing characteristics. This chip is commonly used in computing environments where efficient data processing is required, such as in laptops, desktops, and servers. Its 1.5V operating voltage ensures energy efficiency while maintaining performance. The BGA (Ball Grid Array) packaging allows for compact integration into circuit boards. Overall, the MT41J64M16JT-125:G is designed to provide a balance of speed, capacity, and reliability for various digital applications.

Features

The MT41J64M16JT-125:G is a DDR3 SDRAM component manufactured by Micron Technology. Key features include:
1. Density and Organization: It has a 1 Gb density, organized as 64M x 16.
2. Speed: The component supports a data rate of 1600 MT/s (million transfers per second).
3. Latency: CAS latencies of 11, 10, 9, and 8 are supported.
4. Voltage: Operates at a voltage of 1.5V.
5. Package: Comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.
6. Temperature Ranges: Standard operating temperature range is 0°C to 95°C.
7. Bank Architecture: Features 8 internal banks for efficient data handling.
8. Burst Lengths: Supports burst lengths of 8 and 4 (via the burst chop feature).
9. Auto-Refresh: Incorporates auto and self-refresh modes for power savings.
10. Compatibility: Compliant with JEDEC standards for seamless integration.
These features make the MT41J64M16JT-125:G suitable for a variety of computing and communication applications that require efficient and high-speed data processing.

Package

The MT41J64M16JT-125:G is a DRAM component typically found in a FBGA (Fine-Pitch Ball Grid Array) package. This packaging type is compact and suitable for high-performance memory applications, offering reliable electrical performance and efficient heat dissipation.

Pinout

The MT41J64M16JT-125:G is a DRAM component from Micron's DDR3 SDRAM lineup. It typically comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package. As a 64 Meg x 16-bit device, it is part of the DDR3 SDRAM family and supports high-speed data transfer rates.
Key functions and features include:
- Storage Capacity: 1 Gigabit (Gb).
- Configuration: 64 Meg x 16 bits.
- Voltage: Operates at a standard 1.5V power supply.
- Speed: Supports data rates up to DDR3-1600, with a clock cycle time (tCK) of 1.25ns for the -125 speed grade.
- Features: Includes on-die termination (ODT), dynamic on-die termination, programmable CAS latency, burst length, and self-refresh mode.
This memory chip is used in a wide variety of computing and electronic applications to provide high-speed data storage and retrieval capabilities. The 96-ball FBGA package allows for efficient PCB routing and compact design integration within systems.

Manufacturer

The MT41J64M16JT-125:G is manufactured by Micron Technology, Inc. Micron is a well-known American company that specializes in the production of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, and other memory and storage solutions. The company serves a variety of markets, including consumer electronics, mobile devices, data centers, automotive, and industrial applications. Micron is recognized as one of the leading memory manufacturers in the world, known for its innovation in memory technology and solutions.

Application

The MT41J64M16JT-125:G is a DRAM chip, used primarily in applications requiring volatile memory storage, such as computing systems, networking devices, and consumer electronics. Specific use cases include personal computers, servers, routers, gaming consoles, and embedded systems, where fast and efficient data retrieval and temporary storage are essential.

Equivalent

The MT41J64M16JT-125:G is a DDR3 SDRAM chip by Micron. Equivalent products include:
1. Hynix H5TQ4G63AFR: Similar DDR3 SDRAM specifications.
2. Samsung K4B4G1646D: Matches DDR3 specifications.
3. SK Hynix H5TQ2G83BFR: DDR3 SDRAM with comparable features.
4. Nanya NT5CB64M16: Similar DDR3 configuration.
These equivalents have similar memory capacities, speed, and DDR3 technology, making them suitable alternatives.