MT41K128M8DA-107:J

The MT41K128M8DA-107:J is a DRAM (Dynamic Random Access Memory) chip manufactured by Micron Technology. It features a density of 1 Gigabit (128 Megabytes) organized in a 8-bit wide configuration, making it suitable for applications requiring compact and efficient memory solutions. This chip operates at a maximum clock frequency of 1.6 gigahertz and is designed to meet DDR3 (Double Data Rate 3) standards, which provide enhanced performance and lower power consumption compared to previous generations.
The "107" in the part number indicates a specific speed grade, while the "J" signifies a commercial temperature range. The device adheres to JEDEC (Joint Electron Device Engineering Council) specifications, ensuring compatibility with various systems. Its applications include consumer electronics, mobile devices, and embedded systems, where space and power efficiency are crucial. The MT41K128M8DA-107:J supports multiple functionalities, such as burst mode and random access, making it versatile for diverse computing needs.

The MT41K128M8DA-107:J is a high-density DRAM memory module from Micron Technology, designed for use in various applications, including servers and high-performance computing systems. Here are its key features:
1. Density: 1GB (1,073,741,824 bits) per DRAM chip.
2. Organization: It has a 128M x 8 architecture, providing 8-bit data output.
3. Speed: Operates at a clock speed of 1.07 GHz (DDR3-1066).
4. Voltage: Operates at a low voltage of 1.5V, which enhances power efficiency.
5. Package Type: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
6. Data Rate: Supports a data rate of 8.5 GB/s.
7. Features: Includes features like on-die termination (ODT), and support for various memory modes to optimize performance.
This module is suitable for applications requiring reliable, high-performance memory in a compact form factor.

The MT41K128M8DA-107:J is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) form factor. This type of package is designed for efficient space utilization and thermal performance in compact electronic applications.

The MT41K128M8DA-107:J is a DDR3 SDRAM memory chip with a total of 96 pins. It is organized as 8 banks of 128 Meg x 8 bits. The primary functions of the pins include:
- Data I/O Pins: For data transfer (DQ pins).
- Address Pins: For memory addressing (A pins).
- Control Pins: Such as Chip Select (CS), Write Enable (WE), Read Enable (RE), and Clock (CLK) signals.
- Power and Ground Pins: For supplying power (VDD, VDDQ) and grounding (VSS).
- Refresh Pins: For controlling internal refresh cycles.
This device supports high-speed memory operations with a data rate of up to 1600 MT/s (megatransfers per second), making it suitable for various applications in computing and embedded systems.

The MT41K128M8DA-107:J is manufactured by Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of industries, including automotive, mobile communications, data centers, and consumer electronics. The company is known for its innovation in memory technologies and plays a significant role in the semiconductor market, focusing on advancing storage solutions for various applications.

The MT41K128M8DA-107:J is a 1GB DDR3 SDRAM memory chip, commonly used in various applications such as laptops, desktops, servers, networking devices, and consumer electronics. It supports high-performance computing and data-intensive tasks, making it suitable for gaming, graphics processing, and embedded systems. Its low power consumption also makes it ideal for mobile devices and energy-efficient applications.

The MT41K128M8DA-107:J chip is a 1GB DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR - 1GB DDR3
2. Samsung K4B4G0846F - 1GB DDR3
3. Micron MT41K128M8JT - 1GB DDR3
Ensure compatibility with your specific application as variations may exist in speed, timing, and voltage.