MT41K256M16HA-107:E

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MT41K256M16HA-107:E

IC DRAM 4GBIT PAR 96FBGA

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  • Mfr.부분 #MT41K256M16HA-107:E
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사양

Part Status Obsolete
Base Product Number MT41K256M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 933 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x14)
Packaging Tray
Access Time 20 ns

개요

Description

The MT41K256M16HA-107:E is a DRAM memory chip manufactured by Micron Technology. It is a 4GB DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) module organized as 256Meg x 16 bits, designed for use in various applications including laptops, desktops, and servers. The “107” in the part number indicates it operates at a clock speed of 1066 MT/s (megatransfers per second), while the “E” signifies that it is RoHS compliant, meaning it adheres to environmental regulations restricting hazardous substances.
Key features include a 1.5V operating voltage, low power consumption, and support for various data rates, enhancing performance in multitasking and memory-intensive applications. The chip is packaged in a compact form factor, allowing for efficient integration into electronic devices. Its reliability and efficiency make it suitable for both consumer and industrial applications, ensuring robust performance in diverse computing environments.

Features

The MT41K256M16HA-107:E is a 4GB DDR3 SDRAM memory chip produced by Micron Technology. Key features include:
1. Density: 4Gb (Gigabits) per die, organized as 256M x 16.
2. Interface: DDR3 SDRAM, providing high-speed data transfer.
3. Data Rate: Operates at 1066 MT/s (million transfers per second), with an I/O bandwidth of up to 8.5 GB/s.
4. Voltage: Operates at 1.5V, which contributes to lower power consumption.
5. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package, suitable for compact designs.
6. Features: Supports various functionalities including burst mode, CAS latency options, and on-die termination (ODT).
7. Thermal and Performance: Designed for high performance with improved thermal characteristics.
This memory chip is commonly used in various applications, including PCs, laptops, and embedded systems, where efficient performance and space-saving are essential.

Package

The MT41K256M16HA-107:E is a DRAM memory chip package type in a 78-ball FBGA (Fine Ball Grid Array) format. This compact package is designed for high-density memory applications, providing efficient space utilization and thermal performance.

Pinout

The MT41K256M16HA-107:E is a DDR3 SDRAM chip manufactured by Micron Technology. It has a pin count of 78 pins in a TSV (Thin Small Outline Package), specifically in a 8.0mm x 6.0mm footprint.
The primary function of this memory chip is to provide high-speed data storage for various applications, including computers, mobile devices, and other electronic systems requiring dynamic random-access memory (DRAM). It features a density of 4 gigabits (512 megabytes), organized as 256 megabytes x 16 bits. This chip operates at a data rate of 1066 MT/s (million transfers per second), supporting a supply voltage of 1.5V.
Overall, the MT41K256M16HA-107:E is designed for performance and efficiency in modern computing environments, adhering to DDR3 standards while providing reliable memory solutions.

Manufacturer

The MT41K256M16HA-107:E is manufactured by Micron Technology, Inc. Micron is a prominent American corporation that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse range of markets, including computing, mobile, consumer electronics, automotive, and enterprise applications. The company's focus on innovation and technology has positioned it as one of the largest memory manufacturers globally.

Application

The MT41K256M16HA-107:E is a DDR3 SDRAM memory chip commonly used in applications such as graphics cards, servers, networking equipment, and consumer electronics like smartphones and tablets. Its high-density and fast data rates make it suitable for high-performance computing, data-intensive tasks, and devices requiring efficient memory solutions.

Equivalent

The MT41K256M16HA-107:E is a 4GB DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G63AFR - 4GB DDR3
2. Samsung K4B4G1646F - 4GB DDR3
3. Micron MT41K256M16HA-125 - 4GB DDR3 (with different speed grade)
Always verify compatibility with your specific application requirements.

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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

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EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.

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