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MT46H16M16LFBF-6:H

Name: MT46H16M16LFBF-6:H
Rating: 4.7 (12 reviews)

IC DRAM 256MBIT PARALLEL 60VFBGA

제조업체
Mfr.부분 #MT46H16M16LFBF-6:H
패키지 60-VFBGA
데이터시트
재고 있음4182

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사양

Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - Mobile LPDDR
MemorySize	256Mb (16M x 16)
MemoryInterface	Parallel
ClockFrequency	166 MHz
WriteCycleTime-WordPage	12ns
AccessTime	5 ns
Voltage-Supply	1.7V ~ 1.95V
OperatingTemperature	0°C ~ 70°C (TA)
MountingType	Surface Mount
Package/Case	60-VFBGA

개요

Description

MT46H16M16LFBF-6:H is a Micron Mobile DDR2 SDRAM device. Quick intro:
- Capacity and organization: 256 Mb total, organized as 16M x 16-bit (16Mx16).
- Speed and interface: -6 speed grade (about 6 ns), DDR2-like operation up to ~333 MT/s.
- Voltage: 1.8 V I/O/core (typical for mobile DDR2).
- Package: Lead-free FBGA (LFBF).
- Banks and features: Multi-bank, synchronous operation with standard DDR2 features (burst, refresh, etc.).
- Use case: Designed for mobile/low-profile systems (laptops, tablets); typically used alongside a memory controller and may be paired to form wider data paths.
- Notes: For exact timings (tRC, tRCD, tRP, etc.) and electrical details, consult the official Micron MT46H16M16LFBF-6:H datasheet.

Features

MT46H16M16LFBF-6:H is a 256Mb DDR2 SDRAM with 16M x 16 organization. Key features:
- 256 Mb total, organized 16M x 16
- DDR2 SDRAM, 1.8V I/O (Vcc/Vdd)
- Speed grade: -6 (high-speed grade)
- Banks: 4; Burst length 4/8; Burst type: sequential
- Fully synchronous with clock; supports auto refresh and partial array refresh
- ZQ calibration for impedance tuning; on-die termination options
- Deep power-down mode for low power
- Lead-free, RoHS-compliant FBGA package (LFBF)
- Temperature options: commercial/industrial versions (check datasheet for exact range)
Note: exact timings and operating temperature depend on the specific grade and configuration; refer to the JEDEC DDR2-STD and Micron datasheet for precise specs.

Package

Lead-Free Fine-pitch Ball Grid Array (LFBGA) package.

Pinout

- Pin count: 84-ball LFBGA (84 pins)
- Function: 256-Mbit Mobile DDR2 SDRAM, organized as 16M x 16 (16-bit wide), 4 banks, 1.8V, synchronous DRAM.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, etc.).

Application

MT46H16M16LFBF-6:H is a 16M × 16-bit low‑power mobile DRAM (Micron). Typical applications:
- Main memory for handheld/embedded systems
- Mobile devices (phones, PDAs, tablets, portable media players)
- Digital cameras/camcorders and portable gaming devices
- Embedded controllers, IoT, compact consumer electronics
- Small-form-factor notebooks or memory buffers in compact systems

Equivalent

To give exact equivalents, I need the device specs. MT46H16M16LFBF-6:H is Micron’s 16M×16 memory, but the DDR type (DDR2 or DDR3), density, speed grade (-6), and package matter for cross-references. Please confirm:
- Memory type (DDR2 or DDR3)
- Density/organization (e.g., 256 Mb, 16M×16)
- Temperature range and package
With that, I can provide cross-ref parts from Samsung, Hynix, Nanya, etc.