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MT46H64M16LFCK-6:A
DRAM
- 제조업체
- Mfr.부분 #MT46H64M16LFCK-6:A
- 패키지
- 데이터시트
- 재고 있음10940
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
The MT46H64M16LFCK-6:A is a part of Micron Technology's DRAM (Dynamic Random Access Memory) product line. Specifically, it is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) component. This memory chip features a 64 Meg x 16 configuration, which translates to a total capacity of 1 GB.
It operates at a 6 ns cycle time, making it suitable for applications requiring high-speed memory access. The "LF" in its designation indicates that it is a low-power variant, designed to reduce power consumption, which is crucial for battery-operated devices. The chip typically comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package, making it compact for integration into various electronic systems.
This memory is commonly used in consumer electronics, computing devices, and embedded systems, where reliable and efficient data storage and retrieval are essential. Overall, the MT46H64M16LFCK-6:A is designed for performance and energy efficiency in modern applications.
It operates at a 6 ns cycle time, making it suitable for applications requiring high-speed memory access. The "LF" in its designation indicates that it is a low-power variant, designed to reduce power consumption, which is crucial for battery-operated devices. The chip typically comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package, making it compact for integration into various electronic systems.
This memory is commonly used in consumer electronics, computing devices, and embedded systems, where reliable and efficient data storage and retrieval are essential. Overall, the MT46H64M16LFCK-6:A is designed for performance and energy efficiency in modern applications.
Features
The MT46H64M16LFCK-6:A is a 1Gb (Gigabit) DDR3 SDRAM memory chip from Micron Technology. Key features include:
1. Density: 1GB (8-bit wide x 64 bits).
2. Organization: Configured as 64M x 16.
3. Technology: DDR3 (Double Data Rate 3) memory.
4. Speed: Operates at a 6 ns cycle time, corresponding to a maximum data rate of 1333 MT/s (megatransfers per second).
5. Voltage: Operates with a supply voltage of 1.5V, with a low power mode.
6. Package: Offered in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
7. Features: Supports various features including on-die termination (ODT) for improved signal integrity, and is compatible with JEDEC standards.
This part is widely used in applications such as consumer electronics, computing devices, and networking hardware where reliable memory solutions are required.
1. Density: 1GB (8-bit wide x 64 bits).
2. Organization: Configured as 64M x 16.
3. Technology: DDR3 (Double Data Rate 3) memory.
4. Speed: Operates at a 6 ns cycle time, corresponding to a maximum data rate of 1333 MT/s (megatransfers per second).
5. Voltage: Operates with a supply voltage of 1.5V, with a low power mode.
6. Package: Offered in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
7. Features: Supports various features including on-die termination (ODT) for improved signal integrity, and is compatible with JEDEC standards.
This part is widely used in applications such as consumer electronics, computing devices, and networking hardware where reliable memory solutions are required.
Package
The MT46H64M16LFCK-6:A is a DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format.
Pinout
The MT46H64M16LFCK-6:A is a DRAM memory chip with a pin count of 54 pins. It is organized as 64 Meg x 16 bits (64Mx16), making it suitable for various applications in computing and mobile devices.
Key functions of this memory chip include:
1. Data Storage: It provides volatile memory for temporary data storage.
2. High-Speed Access: Supports high-speed data transfer rates, facilitating efficient processing.
3. Low Power Consumption: Designed for mobile applications, it consumes less power, enhancing battery life in devices.
4. Refresh Capability: Requires periodic refreshing to maintain data integrity, characteristic of DRAM technology.
This chip is commonly used in consumer electronics, computing systems, and various digital devices that require reliable and efficient memory solutions.
Key functions of this memory chip include:
1. Data Storage: It provides volatile memory for temporary data storage.
2. High-Speed Access: Supports high-speed data transfer rates, facilitating efficient processing.
3. Low Power Consumption: Designed for mobile applications, it consumes less power, enhancing battery life in devices.
4. Refresh Capability: Requires periodic refreshing to maintain data integrity, characteristic of DRAM technology.
This chip is commonly used in consumer electronics, computing systems, and various digital devices that require reliable and efficient memory solutions.
Manufacturer
The manufacturer of the MT46H64M16LFCK-6:A is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). The company serves various markets, including computing, mobile, automotive, and industrial sectors, and is known for its innovative technologies and commitment to research and development. Micron's products are integral to modern electronic devices, contributing to advancements in data storage and processing capabilities.
Application
The MT46H64M16LFCK-6:A is a DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics (like laptops and desktops), networking equipment, automotive systems, and industrial computers. Its high-speed data processing capabilities make it suitable for applications requiring efficient performance, such as gaming, video processing, and data-intensive tasks in servers and workstations.
Equivalent
The MT46H64M16LFCK-6:A is a DDR2 SDRAM memory chip. Equivalent products include:
1. Micron MT46H64M16P-6
2. Samsung K4T1G164QE-HCF7
3. Hynix HYMD532G646C6
4. Nanya NT5TU64M16HG-6
These chips have similar specifications, including capacity, organization, and speed. Always check compatibility with the specific application before replacing.
1. Micron MT46H64M16P-6
2. Samsung K4T1G164QE-HCF7
3. Hynix HYMD532G646C6
4. Nanya NT5TU64M16HG-6
These chips have similar specifications, including capacity, organization, and speed. Always check compatibility with the specific application before replacing.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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