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MT47H64M8CF-25E:G

Name: MT47H64M8CF-25E:G
Rating: 4.7 (12 reviews)

IC DRAM 512MBIT PARALLEL 60FBGA

제조업체
Mfr.부분 #MT47H64M8CF-25E:G
패키지 60-TFBGA
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사양

Supplier	Micron Technology Inc.
Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR2
MemorySize	512Mb (64M x 8)
MemoryInterface	Parallel
ClockFrequency	400 MHz
WriteCycleTime-WordPage	15ns
AccessTime	400 ps
Voltage-Supply	1.7V ~ 1.9V
OperatingTemperature	0°C ~ 85°C (TC)
MountingType	Surface Mount
Package/Case	60-TFBGA

개요

Description

MT47H64M8CF-25E:G is a Micron DDR3L SDRAM die. Key points:
- Organization: 64M x 8 (64 megawords x 8 bits) → 512 Mb total per die.
- Package: RoHS-compliant (G suffix), typically in a FBGA/related package.
- Type: DDR3L SDRAM (low-voltage DDR3), requires a memory controller.
- Speed/voltage: -25E denotes a specific Micron speed grade; operation typically around ~1.35 V (DDR3L) with data rates in the ~1066–1333 MT/s range depending on the grade. Exact timings and voltage per datasheet.
- Use: Not a standalone module; used as one memory device in a multi-device DIMM/subsystem controlled by a memory controller, forming a wider 64-bit bus across devices.
For exact electrical specs, timing, package details, and operating conditions, consult the Micron MT47H64M8CF-25E:G datasheet.

Features

MT47H64M8CF-25E:G is Micron’s 512-Mb DDR2 SDRAM device. Key features:
- Capacity/organization: 512 Mb total (64M x 8)
- Interface: DDR2 SDRAM, unbuffered, synchronous
- Data width: 8-bit wide data bus
- Voltage: 1.8V VDD/VDDQ
- Architecture: 4-bank DDR2 with 4n prefetch
- Speed: supports up to DDR2-800 (depends on grade, timing, and operating conditions)
- Packaging: Pb-free RoHS-compliant (G suffix), typically in an FBGA package
- Refresh/operation: standard DDR2 auto-refresh/self-refresh support
- Applications: suitable for mobile/compact systems and memory modules requiring 512 Mb DDR2 RAM

Package

FBGA package (Pb-free, RoHS-compliant).

Pinout

- Pin count: 60-ball FBGA package (60 pins).
- Function: 64M × 8-bit Mobile DDR2 SDRAM memory device with an 8-bit data bus; synchronous DDR2 memory supporting standard address, bank, command, data (DQ/DQS) lines for use as system RAM in mobile devices.

Manufacturer

- Manufacturer: Micron Technology, Inc. (Micron)
- What kind of company: A global American semiconductor company that designs and manufactures memory and storage products (e.g., DRAM, NAND flash).

Application

MT47H64M8CF-25E:G is a 64M×8 (512Mb), low‑power memory device (2.5V SDRAM). Intended as main system RAM in mobile/embedded platforms. Typical applications include mobile phones/handheld devices, embedded controllers, digital cameras/MP3 players, set‑top boxes and smart TVs, routers/switches, industrial automation equipment, and automotive infotainment where compact, low‑power memory is required.

Equivalent

MT47H64M8CF-25E:G is a Micron 512 Mb DDR3L SDRAM (64M×8). Exact equivalents depend on package, voltage and speed. Please provide:
- package code (FBGA variant)
- voltage (1.35V or 1.5V)
- speed grade (e.g., 1333/1066 MT/s)
- any timing/temperature specs
With these, I can give precise cross-references (e.g., SK hynix, Samsung equivalents).