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MT48LC8M16A2P-7E:L

Name: MT48LC8M16A2P-7E:L
Rating: 4.7 (12 reviews)

IC DRAM 128MBIT PAR 54TSOP II

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Mfr.부분 #MT48LC8M16A2P-7E:L
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사양

Part Status	Obsolete
Base Product Number	MT48LC8M16A2
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM
Memory Size	128Mbit
Memory Organization	8M x 16
Memory Interface	Parallel
Clock Frequency	133 MHz
Write Cycle Time - Word, Page	14ns
Voltage - Supply	3V ~ 3.6V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package	54-TSOP (0.400", 10.16mm Width)
Supplier Device Package	54-TSOP II
Packaging	Tray
Access Time	5.4 ns

개요

Description

MT48LC8M16A2P-7E/L is a Micron DDR2 SDRAM memory device.
Key points:
- Capacity/Organization: 128 Mbit total, 8M × 16 (8 million words by 16-bit data)
- Type: Synchronous DDR2 memory with multi-bank organization
- Voltage: 1.8V supply for core and I/O
- Speed Grade: -7E (performance rating defined in the datasheet)
- RoHS: L suffix indicates lead-free, RoHS-compliant packaging
- Typical use: system memory and embedded applications requiring compact, fast RAM; often used in modules and custom boards
Notes:
- For exact timings (CAS latency, tRP, tRCD), data rates, burst lengths, and pinout, consult the Micron MT48LC8M16A2P-7E/L datasheet.
- This is a lower-capacity DDR2 device; verify compatibility with your memory controller and board design.

Features

MT48LC8M16A2P-7E:L is a 128Mb SDRAM with the following key features:
- Organization: 8M x 16 (128Mb total), 4-bank internal structure.
- Synchronous interface: operated under a system clock; data valid on clock edge.
- Burst operations: Burst lengths 2/4/8 and full-page; burst type sequential; auto-precharge option.
- CAS latency: CL = 3 (typical) for the -7E speed grade.
- Speed/throughput: tCK = 7.0 ns (approximately up to 143 MHz).
- I/O: 16-bit data path with write masking via DQM lines.
- Refresh: automatic refresh with self-refresh capability.
- Power/thermal: suitable for standard power/thermal envelopes; extended-temp version available (-E) for -40°C to +85°C.
- Packaging and finish: P suffix (plastic package); L suffix indicates lead-free.
Note: voltage ranges depend on the exact variant (commonly 2.5V core/I/O or 3.3V variants); please consult the datasheet for exact supply pins and voltage specs.

Package

TSOP II, 54-pin plastic surface-mount package (Pb-free).

Pinout

- Pin count: 54 pins (TSOP II, P-package)
- Function: Mobile SDRAM — 8M × 16 organization (128 Mbit), two-bank, low-power synchronous DRAM (1.8V) with a 16-bit data bus and standard SDRAM control signals.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, SSDs).

Application

MT48LC8M16A2P-7E:L is a 8M × 16-bit SDRAM used as main system memory. Typical applications include desktop/laptop DIMMs, embedded systems, industrial/telecom equipment, and consumer electronics (set-top boxes, printers, digital TVs) requiring moderate-density, high-speed SDRAM.

Equivalent

MT48LC8M16A2P-7E:L is a 128 Mb (8M × 16) 3.3V Synchronous DRAM, -7E speed, RoHS (lead-free). Equivalents are other vendors’ 128 Mb ×16 SDRAMs with the same pinout and timing (same voltage and speed grade). Major makers’ 128 Mb ×16 parts (Samsung, Hynix, Nanya, Winbond) in similar packages are suitable cross-references. For exact part numbers and pinouts, use a cross-reference lookup (DigiKey/Mouser) with specs: density 128 Mb, bus width 16, voltage 3.3V, speed grade -7E.