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MT53E1G32D2FW-046 IT:B

Name: MT53E1G32D2FW-046 IT:B
Rating: 4.7 (12 reviews)

DRAM LPDDR4 32Gbit 32 200/264 TFBGA 2 IT

제조업체Micron
Mfr.부분 #MT53E1G32D2FW-046 IT:B
패키지
데이터시트
재고 있음3247

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Packaging	Tray
Standard Pack Qty	1360

개요

Description

The MT53E1G32D2FW-046 IT:B is a 1 Gigabit (1G) DDR3 SDRAM memory chip manufactured by Micron Technology. It features a 32-bit data width and operates at a frequency of 1066 MT/s (megatransfers per second), suitable for various applications requiring high-speed memory. This part is typically used in mobile devices, automotive applications, and embedded systems, providing efficient data processing and storage capabilities.
The "IT" designation indicates it is an industrial temperature range component, suitable for environments that may experience temperature extremes. The "B" at the end signifies specific manufacturing or design characteristics per Micron's identification system. This memory module is designed to deliver reliable performance and energy efficiency, making it ideal for use in applications like communication systems, networking devices, and consumer electronics.

Features

The MT53E1G32D2FW-046 IT:B is a 1 Gb (Gigabit) DDR3 SDRAM memory device produced by Micron Technology. Key features include:
- Density: 1 Gigabit, organized as 1 G x 32 bits.
- Technology: DDR3 (Double Data Rate 3), offering improved performance and power efficiency over previous DDR generations.
- Data Rate: Operates at a maximum data rate of 1066 MT/s (Mega Transfers per second).
- Voltage: Operates at 1.5V, making it suitable for low-power applications.
- Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package.
- Temperature Range: IT:B grade indicates an industrial temperature range, typically from -40°C to 95°C.
- Features: Supports features such as enhanced burst lengths and write leveling for improved data integrity and performance.
This memory chip is suitable for use in various applications, including networking, industrial systems, and embedded devices, where reliability and efficiency are critical.

Package

The MT53E1G32D2FW-046 IT:B is a low-power DDR3 DRAM memory chip packaged in a 78-ball TFBGA (Thin-Fine Ball Grid Array). This packaging offers a compact form factor suitable for mobile and embedded applications.

Pinout

The MT53E1G32D2FW-046 IT:B is a DDR3 SDRAM device from Micron Technology. It features a total of 60 pins. The primary functions of these pins include:
1. Data Pins (DQ): 32 pins for data input/output, allowing for data transfer.
2. Address Pins (A): 15 pins for addressing the memory locations.
3. Control Pins: Various pins such as CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), WE (Write Enable), and others to manage memory operations.
4. Power and Ground Pins: For providing power and grounding the device.
This device supports a range of functionalities, including read and write operations, burst modes, and power-saving features, making it suitable for use in various memory applications. The "046" in the part number indicates the speed grade, while "IT:B" signifies the temperature range and packaging type.

Manufacturer

The MT53E1G32D2FW-046 IT:B is manufactured by Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, the company serves a wide range of industries, including computing, networking, mobile, and automotive applications. Micron is known for its innovation in memory technology and is one of the largest manufacturers in the semiconductor industry.

Application

The MT53E1G32D2FW-046 IT:B is a 1Gb DDR3 SDRAM memory chip commonly used in mobile devices, automotive applications, and consumer electronics. Its applications include smartphones, tablets, IoT devices, and other embedded systems requiring high-speed memory with low power consumption.

Equivalent

The MT53E1G32D2FW-046 IT:B chip, a mobile DRAM component, has equivalent products from various manufacturers, such as Samsung K3EG2G40F, Hynix H5TQ2G83CFR, and Micron MT53E1G32D2FW-046. It's advisable to consult the manufacturer's datasheets for specific compatibility and performance characteristics when considering alternatives.