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MT53E768M32D4DT-053 WT:E

Name: MT53E768M32D4DT-053 WT:E
Rating: 4.7 (12 reviews)

DRAM LPDDR4 24G 768MX32 FBGA QDP Z1AM

제조업체
Mfr.부분 #MT53E768M32D4DT-053 WT:E
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사양

Packaging	Tray
Standard Pack Qty	1360

개요

Description

The MT53E768M32D4DT-053 WT:E is a specific model of DRAM (Dynamic Random Access Memory) produced by Micron Technology. It is a part of the DDR4 SDRAM family, designed for high-performance computing applications. The designation indicates key specifications:
- Capacity: 768 Mbit (megabits)
- Organization: 32 bits (4 bytes) wide
- Data Rate: The "053" signifies a speed grade, with higher numbers typically indicating faster data rates.
- Type: It operates with a double data rate, meaning it can transfer data on both the rising and falling edges of the clock cycle, enhancing throughput.
The "WT" denotes the package type and temperature range, indicating the operational reliability in various environments. This component is commonly used in servers, workstations, and other memory-intensive applications due to its performance characteristics.

Features

The MT53E768M32D4DT-053 WT:E is a memory module manufactured by Micron Technology, specifically designed for high-performance applications. Here are its key features:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory).
2. Capacity: 2 GB (Gigabytes) per memory chip, with a total of 8 chips for a capacity of 16 GB when fully populated.
3. Data Width: 32 bits, suitable for applications requiring wide data paths.
4. Speed: Operates at a clock frequency of 533 MHz (DDR3-1066), providing efficient data transfer rates.
5. Voltage: Operates at a low voltage of 1.5V, contributing to energy efficiency.
6. Form Factor: Typically available in a smaller form factor, ideal for embedded systems or compact designs.
7. Applications: Targeted for use in networking equipment, telecommunications, and other industrial applications requiring reliable memory performance.
This memory solution balances performance with power efficiency, making it suitable for various demanding environments.

Package

The MT53E768M32D4DT-053 WT:E is a DDR4 SDRAM memory chip packaged in a 78-ball FBGA (Fine Pitch Ball Grid Array) format. This package type is designed for compact applications and provides efficient thermal and electrical performance.

Pinout

The MT53E768M32D4DT-053 WT:E is a DDR4 SDRAM memory chip produced by Micron Technology. It features a pin count of 78 pins. This memory device is organized as 768 Meg x 32 bits, which indicates it has a capacity of 24 gigabytes (GB).
The primary functions of this chip include data storage and retrieval at high speeds, catering to applications that require significant memory bandwidth, such as servers, networking devices, and high-performance computing systems. It supports various functionalities, including burst mode, on-die termination (ODT), and a wide operating voltage range. The device's architecture allows for efficient performance in data-intensive applications.

Manufacturer

The manufacturer of the MT53E768M32D4DT-053 WT:E is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of memory and storage solutions, including DRAM, NAND, and NOR flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the leading manufacturers in the semiconductor industry, focusing on innovative memory technologies for a wide range of applications, from consumer electronics to data centers. The company serves various markets, including automotive, mobile, and enterprise solutions, making it a key player in the global tech landscape.

Application

The MT53E768M32D4DT-053 WT:E is a DDR4 SDRAM memory chip primarily used in high-performance computing applications, including servers, networking equipment, and enterprise storage systems. It supports advanced data processing tasks and is ideal for applications requiring high bandwidth and low latency, such as data centers, artificial intelligence, and machine learning workloads.

Equivalent

The MT53E768M32D4DT-053 WT:E chip is a DRAM memory chip from Micron, specifically a DDR4 SDRAM. Equivalent products may include similar specifications from other manufacturers, such as:
1. Samsung K4A8G085WB-BCTD
2. Hynix H5AN8G8NBJR
3. SK Hynix H5GQ8H24AFR
Ensure that the voltage, speed, and configuration match for compatibility. Always check datasheets for detailed specifications.