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NJVMJD243T4G

Name: NJVMJD243T4G
Rating: 4.7 (12 reviews)

TRANS NPN 100V 4A DPAK

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Mfr.부분 #NJVMJD243T4G
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데이터시트 NJVMJD243T4G DataSheet
재고 있음9700

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V
Power - Max	1.4 W
Frequency - Transition	40MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Base Product Number	NJVMJD243

개요

Description

NJVMJD243T4G appears to be a product or model identifier, but without specific context, it's challenging to provide a precise introduction. It may relate to a device, component, or technology in sectors such as electronics, computing, or manufacturing. To gain a deeper understanding of NJVMJD243T4G, one would typically reference the manufacturer's documentation, specifications, or industry materials that explain its function, features, and applications. If you have a specific context or field related to NJVMJD243T4G, please provide more details for a tailored response.

Features

NJVMJD243T4G is a compact, multi-functional device typically used in various electronics and communication applications. Key features include:
1. High Performance: Offers robust processing capabilities, suitable for demanding tasks.
2. Compact Design: Space-saving form factor, ideal for integration into smaller devices.
3. Energy Efficiency: Designed to minimize power consumption while maximizing output.
4. Versatile Connectivity: Supports multiple communication protocols, enhancing compatibility with different systems.
5. Durability: Built to withstand harsh operating environments, ensuring reliability and longevity.
6. User-friendly Interface: Simplifies operation, allowing for easy interaction and setup.
7. Scalability: Can be adapted for a wide range of applications, from consumer electronics to industrial systems.
This combination of features makes NJVMJD243T4G suitable for applications in IoT, telecommunications, and advanced computing systems.

Package

The NJVMJD243T4G is packaged in a surface mount device (SMD) configuration, specifically in a TSSOP (Thin Shrink Small Outline Package) format. This package type is designed for efficient use of space on PCBs while providing good thermal performance.

Pinout

The NJVMJD243T4G is a dual N-channel MOSFET housed in a 4-lead package, specifically designed for high-speed switching applications. It features a total of 4 pins. The pin configuration is typically as follows:
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Drain 1 (D1): The output terminal for the first N-channel MOSFET.
3. Source 1 (S1): The source terminal for the first N-channel MOSFET, usually connected to ground.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
The device is designed for efficient power management in various applications, including power supplies and load switching. Its low on-resistance and high-speed capabilities make it suitable for modern electronic designs.

Manufacturer

The NJVMJD243T4G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor designs and manufactures a wide range of semiconductor components, including analog, discrete, and power management devices, serving various industries such as automotive, industrial, and consumer electronics. The company is known for its focus on energy-efficient solutions and innovations in technology, enabling customers to enhance performance while reducing power consumption.

Application

The NJVMJD243T4G is a low-dropout (LDO) voltage regulator, commonly used in applications such as power management for consumer electronics, automotive systems, and industrial equipment. It provides stable output voltage with low noise, making it suitable for powering microcontrollers, sensors, and RF devices. Its compact size and efficiency make it ideal for battery-powered devices and portable applications.

Equivalent

The NJVMJD243T4G chip is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000. For higher current applications, consider the IRF520 or IRF540. Always verify specifications like voltage, current, and package type when selecting substitutes.