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NRVTS2H60ESFT1G
DIODE SCHOTTKY SOD123
- 제조업체
- Mfr.부분 #NRVTS2H60ESFT1G
- 패키지 SOD-123FL
- 데이터시트
- 재고 있음2293
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 60 V |
| Current-AverageRectified(Io) | 2A |
| Voltage-Forward(Vf)(Max)@If | 650 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 12 µA @ 60 V |
| MountingType | Surface Mount |
| Package/Case | SOD-123F |
| SupplierDevicePackage | SOD-123FL |
개요
Description
The NRVTS2H60ESFT1G is often used in power supplies, motor control circuits, and DC-DC converters. Its compact package allows for efficient thermal performance and easy integration into circuit designs.
Key features typically include fast switching speeds, robust avalanche ratings, and compatibility with surface mount technology (SMT), facilitating automated assembly processes. When selecting this MOSFET, it is crucial to consider its thermal management and ensure that it operates within its specified parameters for optimal performance.
Overall, the NRVTS2H60ESFT1G is a reliable choice for engineers looking to implement efficient high-voltage solutions in their designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of approximately 30A, allowing it to manage substantial loads.
3. R_DS(on): The on-resistance is low, typically around 25 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient driving with lower gate voltages.
5. Package Type: It comes in a compact TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The MOSFET supports fast switching speeds, enhancing performance in high-frequency applications.
Overall, the NRVTS2H60ESFT1G is ideal for applications in power supplies, motor drives, and DC-DC converters due to its efficiency and robust specifications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, completing the circuit.
The NRVTS2H60ESFT1G is designed for applications requiring efficient switching performance in power management systems.
Manufacturer
Application
Equivalent
배송
배송 방법We
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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