이미지는 참조용만
NSI1306M25-DSWR
- 제조업체
- Mfr.부분 #NSI1306M25-DSWR
- 패키지
- 데이터시트 NSI1306M25-DSWR DataSheet
- 재고 있음20358
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Manufacturer | NOVOSENSE |
| Package | SOP-16-300mil |
개요
Description
The NSI1306M25-DSWR is a high-performance N-channel MOSFET designed for various applications, including power management, switching, and amplification. Featuring a low on-resistance (R_DS(on)) and high-speed switching capabilities, it ensures efficient performance in circuit designs. With a maximum drain-source voltage of 25V and continuous drain current ratings typically up to 30A, this MOSFET is suitable for automotive, industrial, and consumer electronics.
The device is encapsulated in a compact SO-8 package, facilitating easy integration into space-constrained designs. Its thermal characteristics allow for effective heat dissipation, which is crucial for maintaining performance under load. The NSI1306M25-DSWR also includes a gate threshold voltage that enables operation with low drive voltages, enhancing compatibility with modern microcontrollers and logic devices.
Overall, it is an excellent choice for applications requiring robust performance, reliability, and efficiency in switching operations.
The device is encapsulated in a compact SO-8 package, facilitating easy integration into space-constrained designs. Its thermal characteristics allow for effective heat dissipation, which is crucial for maintaining performance under load. The NSI1306M25-DSWR also includes a gate threshold voltage that enables operation with low drive voltages, enhancing compatibility with modern microcontrollers and logic devices.
Overall, it is an excellent choice for applications requiring robust performance, reliability, and efficiency in switching operations.
Features
The NSI1306M25-DSWR is a high-voltage, dual N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 16A, ensuring robust performance in demanding environments.
3. Low R_DS(on): Provides low on-resistance (R_DS(on)) values, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching Speed: Facilitates rapid switching, contributing to improved performance in high-frequency applications.
5. Thermal Considerations: Comes with a package that supports effective heat dissipation, ensuring reliability under load.
6. Applications: Ideal for use in power supplies, motor drivers, and DC-DC converters.
This MOSFET is widely utilized in consumer electronics, automotive, and industrial applications, thanks to its reliable performance and efficiency.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 16A, ensuring robust performance in demanding environments.
3. Low R_DS(on): Provides low on-resistance (R_DS(on)) values, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching Speed: Facilitates rapid switching, contributing to improved performance in high-frequency applications.
5. Thermal Considerations: Comes with a package that supports effective heat dissipation, ensuring reliability under load.
6. Applications: Ideal for use in power supplies, motor drivers, and DC-DC converters.
This MOSFET is widely utilized in consumer electronics, automotive, and industrial applications, thanks to its reliable performance and efficiency.
Package
The NSI1306M25-DSWR is packaged in a surface mount device (SMD) format, specifically in a DPAK package type. This package is designed for efficient thermal performance and facilitates easy integration into electronic circuits.
Pinout
The NSI1306M25-DSWR is a dual N-channel MOSFET in a SO-8 package. It features a pin count of 8. The primary function of this device is to provide efficient switching and amplification in various electronic applications, such as power management and signal processing.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - Output for the first MOSFET.
3. Source 1 (S1) - Ground reference for the first MOSFET.
4. Source 2 (S2) - Ground reference for the second MOSFET.
5. Drain 2 (D2) - Output for the second MOSFET.
6. Gate 2 (G2) - Controls the second MOSFET.
7. Drain 1 (D1) - Also noted in the pinout as a repeat for clarity.
8. Source 2 (S2) - Also noted in the pinout as a repeat for clarity.
This configuration allows for integrated control of two separate channels in a compact form factor.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - Output for the first MOSFET.
3. Source 1 (S1) - Ground reference for the first MOSFET.
4. Source 2 (S2) - Ground reference for the second MOSFET.
5. Drain 2 (D2) - Output for the second MOSFET.
6. Gate 2 (G2) - Controls the second MOSFET.
7. Drain 1 (D1) - Also noted in the pinout as a repeat for clarity.
8. Source 2 (S2) - Also noted in the pinout as a repeat for clarity.
This configuration allows for integrated control of two separate channels in a compact form factor.
Manufacturer
The NSI1306M25-DSWR is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of electronic components and solutions, including power management, analog, digital, and mixed-signal devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics, focusing on energy efficiency and sustainability in its products. ON Semiconductor is known for its innovation in semiconductor technology and is headquartered in Phoenix, Arizona, USA.
Application
The NSI1306M25-DSWR is a high-speed, low-loss N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, battery management systems, motor drives, and power supply circuits. It is suitable for use in automotive, industrial, and consumer electronics due to its efficiency and thermal performance.
Equivalent
The NSI1306M25-DSWR is a dual N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and AO3400. Always verify specifications such as voltage, current ratings, and package type for compatibility in your specific application.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
지불 기간은 100% 사전 지불입니다.
현재, 우리는 아래 지불 방법만 받아들입니다.:
1. PayPal
2. 신용/직불 카드
3. 전선 전송
비슷한
-
MX25L3233FZBI-08Q
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25V1635FM2I
Macronix
-
MX25U3232FZBI02
Macronix