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NSV60600MZ4T1G
TRANS PNP 60V 6A SOT223
- 제조업체
- Mfr.부분 #NSV60600MZ4T1G
- 패키지
- 데이터시트
- 재고 있음7396
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V |
| Power - Max | 800 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) |
| Base Product Number | NSV60600 |
개요
Description
The device is housed in a compact, surface-mount SO-8 package, allowing for efficient thermal performance and ease of integration into circuit designs. It offers low on-resistance (RDS(on)) values, which reduces power loss during operation and enhances overall efficiency. Additionally, the NSV60600MZ4T1G is optimized for fast switching speeds, making it ideal for applications requiring rapid on-off control.
Overall, the NSV60600MZ4T1G is a versatile and reliable MOSFET choice for engineers looking to optimize performance in their electronic designs.
Features
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for mid-range voltage applications.
- Current Rating: The continuous drain current (I_D) capability is up to 60A, allowing for substantial power handling.
- Low R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 11 mΩ, which improves efficiency and reduces heat generation during operation.
- Package: Available in a compact SO-8 package, facilitating space-efficient designs.
- Fast Switching: The device supports high-frequency operation, which is beneficial for applications requiring rapid switching.
- Thermal Stability: The MOSFET is designed for improved thermal management, ensuring reliability under load.
These features make the NSV60600MZ4T1G suitable for demanding applications in consumer electronics, automotive, and industrial sectors.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching state. A voltage applied to the gate turns the MOSFET on (conducting state).
2. Drain (D): The input for the current flow from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the output pin where the current exits the device.
4. Gate/Source (G/S): This pair is linked for some package configurations but typically can refer to the common connection of the gate to the source.
The NSV60600MZ4T1G is commonly used in applications such as power management, battery management systems, and load switching due to its low on-resistance and high-speed operation capabilities.
Manufacturer
Application
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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