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NTA4153NT1G
MOSFET N-CH 20V 915MA SC75
- 제조업체
- Mfr.부분 #NTA4153NT1G
- 패키지 SC-75-3
- 데이터시트
- 재고 있음7692
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사양
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 915mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.5V, 4.5V |
| RdsOn(Max)@IdVgs | 230mOhm @ 600mA, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.82 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| InputCapacitance(Ciss)(Max)@Vds | 110 pF @ 16 V |
| PowerDissipation(Max) | 300mW (Tj) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-75, SOT-416 |
개요
Description
Key specifications typically include a maximum drain-source voltage (V_DS), a high continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). These attributes enable efficient operation and thermal management in compact circuits.
The "G" suffix indicates that it is available in a surface-mounted package, facilitating easier integration into modern PCB designs. This MOSFET is valued for its reliability and performance, making it suitable for consumer electronics, automotive applications, and industrial systems.
Overall, NTA4153NT1G exemplifies the advancements in semiconductor technology aimed at enhancing energy efficiency and performance in electronic devices.
Features
- Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
- Current Rating: The device can handle a continuous drain current (ID) of up to 60A, providing robust performance in power management tasks.
- RDS(on): It boasts a low on-resistance (RDS(on)), typically around 8 mΩ, which enhances efficiency by reducing power loss during operation.
- Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing it to be easily driven by low-voltage logic levels.
- Package: It comes in a TO-220 package, ensuring good thermal performance and ease of heat dissipation.
- Switching Speed: The NTA4153NT1G features fast switching capabilities, making it suitable for applications like DC-DC converters, motor drives, and power management systems.
These characteristics make the NTA4153NT1G an excellent choice for various electronic and power applications.
Package
Pinout
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The output terminal where the current flows out.
3. Source (S): The terminal through which the current enters the MOSFET.
The specific pin arrangement may vary slightly based on the package type, but generally follows this structure. The NTA4153NT1G is designed for low voltage, high-speed switching applications, making it suitable for various consumer electronics and power management tasks. Additionally, it features low on-resistance and fast switching capabilities, enhancing efficiency in circuits.
Manufacturer
Application
Equivalent
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