NTD6415ANLT4G

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NTD6415ANLT4G

MOSFET N-CH 100V 23A DPAK

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사양

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 23A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 52mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1024 pF @ 25 V
PowerDissipation(Max) 83W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

개요

Description

NTD6415ANLT4G is a high-performance N-channel MOSFET designed for various electronic applications, particularly in power management and switching circuits. It features a low on-resistance (RDS(on)) and a high drain-source voltage rating, making it efficient for use in power supplies, motor drivers, and other applications where efficient switching is crucial.
The device typically comes in a TO-220 package, facilitating heat dissipation and making it suitable for high-current applications. Its gate threshold voltage is optimized for low-voltage driving, allowing for compatibility with a wide range of control circuits.
Key specifications often include a maximum VDS rating of 60V, a continuous drain current capability of up to 15A, and fast switching times, which contribute to improved overall system performance.
When using the NTD6415ANLT4G, careful attention to thermal management, gate drive voltage, and switching frequency is essential to ensure reliable operation and to maximize efficiency in the designed application.

Features

The NTD6415ANLT4G is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 62A, making it ideal for power management.
3. On-Resistance: With a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at V_GS = 10V, it ensures minimal power loss and heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy drive with low gate voltages.
5. Package: It comes in a TO-220 package, providing efficient thermal performance and ease of mounting.
6. Fast Switching: The MOSFET features fast switching capabilities, making it suitable for high-frequency applications.
7. Thermal Resistance: It has a low thermal resistance, enhancing its reliability in demanding environments.
These features make the NTD6415ANLT4G suitable for applications such as power supplies, motor drivers, and other high-power switching scenarios.

Package

The NTD6415ANLT4G is packaged in a TO-220 form factor, which is a metal tab package designed for power devices, providing good thermal management and ease of mounting.

Pinout

The NTD6415ANLT4G is a dual N-channel MOSFET with a total of 8 pins. It features a common source configuration, allowing for efficient switching applications. The pinout is as follows:
1. Gate 1 - Control gate for the first N-channel MOSFET.
2. Source 1 - Source terminal for the first N-channel MOSFET.
3. Drain 1 - Drain terminal for the first N-channel MOSFET.
4. Gate 2 - Control gate for the second N-channel MOSFET.
5. Source 2 - Source terminal for the second N-channel MOSFET.
6. Drain 2 - Drain terminal for the second N-channel MOSFET.
7. Drain 1 (common) - Common drain terminal shared for both MOSFETs.
8. Source 1 (common) - Common source terminal shared for both MOSFETs.
This device is typically used in power management and switching applications due to its low on-resistance and high efficiency. Always refer to the manufacturer's datasheet for detailed specifications and applications.

Manufacturer

The NTD6415ANLT4G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, and discrete devices. The company serves various industries, such as automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its commitment to innovation and sustainability, offering products designed to enhance efficiency and performance in electronic systems.

Application

The NTD6415ANLT4G is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control systems. Its low on-resistance and high-speed switching capabilities make it suitable for energy-efficient designs in consumer electronics, automotive applications, and industrial equipment. Additionally, it can be utilized in load switching and battery management systems.

Equivalent

The NTD6415ANLT4G is a N-channel MOSFET. Equivalent products include:
1. NTD6415ANL (similar specifications, without the lead-free finish)
2. BSS138 (lower voltage ratings)
3. FQP30N06L (higher current capabilities)
4. STP16NF06 (similar voltage and current ratings)
Always check the specific datasheets for exact specifications to ensure compatibility.

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