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NTHD3101FT1G
MOSFET P-CH 20V 3.2A CHIPFET
- 제조업체
- Mfr.부분 #NTHD3101FT1G
- 패키지
- 데이터시트
- 재고 있음7033
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365 일 보장
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.2A (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 80mOhm @ 3.2A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 7.4 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 680 pF @ 10 V |
| FETFeature | Schottky Diode (Isolated) |
| PowerDissipation(Max) | 1.1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | ChipFET™ |
개요
Description
The NTHD3101FT1G supports a maximum drain-source voltage (VDS) and can handle significant continuous drain current (ID), making it suitable for demanding environments. Its compact package design allows for easy integration into circuits, and it is widely utilized in consumer electronics, automotive, and industrial applications.
Overall, the NTHD3101FT1G is valued for its reliability, efficiency, and versatility in electronic circuit design.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 18A, offering efficient performance.
3. Low R_DS(on): The device boasts a low on-resistance (R_DS(on)), typically around 14 mΩ, which minimizes power loss and improves thermal performance.
4. Fast Switching Speed: Its design allows for fast switching, making it ideal for high-frequency applications.
5. Package: Available in a compact surface-mount SO-8 package, facilitating easy integration into space-constrained designs.
6. Thermal Performance: It supports good thermal management due to its low thermal resistance.
7. Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
Overall, the NTHD3101FT1G is a versatile and reliable component for various power electronics applications.
Package
Pinout
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal where the output current flows out.
3. Source (S) - The terminal where the input current enters.
The remaining pins are typically connected to the substrate or for specific packaging configurations, which may include:
4. Substrate/Body (B) - Usually internally connected to the source.
5. Gate (G) - Sometimes additional gates may appear based on the packaging.
6. Drain (D) - Additional points for enhanced routing in multi-channel packages.
The NTHD3101FT1G is characterized by low on-resistance and fast switching capabilities, making it suitable for applications in power management, load switching, and signal switching in various electronic devices.
Manufacturer
Application
Equivalent
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