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NTMFS4841NHT1G
MOSFET N-CH 30V 8.6A/59A 5DFN
- 제조업체
- Mfr.부분 #NTMFS4841NHT1G
- 패키지
- 데이터시트 NTMFS4841NHT1G DataSheet
- 재고 있음12635
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사양
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 8.6A (Ta), 59A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33 nC @ 11.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2113 pF @ 12 V |
| PowerDissipation(Max) | 870mW (Ta), 41.7W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
개요
Description
The NTMFS4841NHT1G operates at a gate voltage of 10V and has a maximum continuous drain current rating, making it suitable for demanding power applications. Its compact package design (SO-8) allows for efficient PCB space utilization. The device also offers fast switching capabilities, improving the overall performance of power conversion circuits.
When selecting this MOSFET for a design, consider parameters such as threshold voltage, maximum drain-source voltage (V_DS), and thermal characteristics to ensure compatibility with the intended application. Overall, it is a reliable component for enhancing power efficiency in electronic circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, suitable for various power applications.
2. Current Rating: It supports a continuous drain current (ID) of up to 80A, allowing for robust performance in high-current scenarios.
3. Low On-Resistance: The on-resistance (RDS(on)) is typically low, around 4.5 mΩ at 10V, which helps minimize power loss and improve efficiency.
4. Fast Switching Speed: It offers fast switching capabilities, making it suitable for switching power supplies and DC-DC converters.
5. Package: Housed in a DPAK package, it provides good thermal performance and ease of mounting.
6. Thermal Resistance: A low thermal resistance ensures effective heat dissipation, supporting reliable operation at high currents.
These features make the NTMFS4841NHT1G suitable for automotive, industrial, and consumer electronics applications, especially in power management systems.
Package
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is on.
3. Source (S) - The terminal through which the current flows into the MOSFET.
The device typically features a low R_DS(on) for efficient switching applications, making it suitable for power management in various electronic circuits. The specific arrangement and function of pins can be referenced from the manufacturer's datasheet for details on layout and characteristics.
Manufacturer
Application
Equivalent
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