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NTMFS5C426NT1G
MOSFET N-CH 40V 41A/235A 5DFN
- 제조업체
- Mfr.부분 #NTMFS5C426NT1G
- 패키지
- 데이터시트 NTMFS5C426NT1G DataSheet
- 재고 있음14961
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배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 41A (Ta), 235A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.3mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 3.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4300 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 128W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
개요
Description
The device is housed in a compact SO-8 package, allowing for efficient thermal management and PCB space savings. With its fast switching capabilities and low gate charge, the NTMFS5C426NT1G is ideal for high-frequency applications. It also features a built-in body diode, which provides additional protection and improves efficiency in half-bridge configurations. Overall, this MOSFET is a reliable choice for engineers looking to enhance the performance and efficiency of their electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 5.6A, providing robust performance in switching applications.
3. R_DS(on): The on-resistance is low (approximately 4.5 mΩ at V_GS = 10V), which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is between 1V and 2.5V, suitable for logic-level driving.
5. Package Type: It comes in a compact DPAK (TO-252) package, facilitating easy integration into electronic designs.
6. Applications: Ideal for use in DC-DC converters, motor drivers, and other power management applications.
Overall, the NTMFS5C426NT1G is engineered for efficient switching with minimal energy loss, making it a versatile choice for modern electronic systems.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
The functionality of this MOSFET includes low on-resistance and fast switching, making it suitable for applications in power management, DC-DC converters, and load switching. It's designed for efficient operation in various electronic circuits.
Manufacturer
Application
Equivalent
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