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NTMFS5C460NLT1G
MOSFET N-CH 40V 5DFN
- 제조업체
- Mfr.부분 #NTMFS5C460NLT1G
- 패키지
- 데이터시트 NTMFS5C460NLT1G DataSheet
- 재고 있음21367
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사양
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 78A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4.5mOhm @ 35A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 20 V |
| PowerDissipation(Max) | 3.6W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
개요
Description
Key specifications include a maximum continuous drain current of 60A and a maximum drain-source voltage of 60V. Its low gate charge (Qg) allows for faster switching speeds, reducing energy loss during operation. The device is packaged in a TO-220 style, facilitating effective heat dissipation.
Additionally, the NTMFS5C460NLT1G is characterized by its robustness and reliability, making it suitable for automotive and industrial applications. With a high threshold voltage and low gate-to-source leakage current, it ensures efficient performance in various conditions.
Overall, this MOSFET is a versatile component for engineers looking to enhance power efficiency and thermal management in electronic circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 60A, providing robust performance in demanding conditions.
3. R_DS(on): It offers a low on-resistance of approximately 12 mΩ at V_GS = 10V, enhancing power efficiency and reducing heat generation.
4. Package: The MOSFET is housed in a TO-220 package, which facilitates effective heat dissipation.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling easy drive with standard logic levels.
6. Switching Speed: Fast switching capabilities make it suitable for applications like DC-DC converters and motor control.
Overall, the NTMFS5C460NLT1G is ideal for applications requiring high power efficiency and thermal performance.
Package
Pinout
The pins are typically configured as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where current flows out when the device is on.
3. Source (S): The input terminal where current flows in when the device is on.
4. Body (substrate): Internally connected to the source.
This MOSFET is characterized by low on-resistance, high-speed switching capabilities, and is designed to handle high current and voltage levels, making it suitable for various power applications.
Manufacturer
Application
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