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NTMFWS1D5N08XT1G

Name: NTMFWS1D5N08XT1G
Rating: 4.7 (12 reviews)

MOSFET - POWER, SINGLE, N-CHANNE

제조업체
Mfr.부분 #NTMFWS1D5N08XT1G
패키지
데이터시트 NTMFWS1D5N08XT1G DataSheet
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사양

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	253A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.43mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.6V @ 330µA
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5880 pF @ 40 V
Power Dissipation (Max)	194W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case	8-PowerTDFN, 5 Leads

개요

Description

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Features

The NTMFWS1D5N08XT1G is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 5A, making it ideal for various power regulation tasks.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)), which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The MOSFET supports high-speed switching, beneficial for applications like DC-DC converters and motor drives.
5. Thermal Performance: With a robust thermal resistance, it can efficiently dissipate heat during operation.
6. Package: It is available in a compact SO-8 package, allowing for space-saving designs in PCBs.
These characteristics make the NTMFWS1D5N08XT1G suitable for a variety of applications in consumer electronics, automotive, and industrial sectors.

Package

The NTMFWS1D5N08XT1G is packaged in a SO-8 (Small Outline) package type. This compact surface-mount package is designed for efficient thermal performance and space-saving applications.

Pinout

The NTMFWS1D5N08XT1G is a N-channel MOSFET with a pin count of 8. It is designed for various switching and power management applications. The key functions of its pins are as follows:
1. Gate (G): Controls the MOSFET operation, turning it on/off.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): Connects to ground or the negative side of the load.
The device features low on-resistance and fast switching capabilities, making it suitable for applications such as power management in DC-DC converters and motor control. The N-channel configuration allows for efficient conduction and improved thermal performance.
For detailed specifications, including voltage ratings and current capabilities, consult the datasheet provided by the manufacturer.

Manufacturer

The manufacturer of the NTMFWS1D5N08XT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that provides a wide range of semiconductor solutions, including power management, analog, and mixed-signal devices. The company serves various markets, including automotive, industrial, communication, and consumer electronics. With a focus on energy-efficient solutions, ON Semiconductor is known for its commitment to sustainability and innovation in the semiconductor industry.

Application

The NTMFWS1D5N08XT1G is a high-voltage N-channel MOSFET used in various applications including power management, DC-DC converters, automotive electronics, and industrial control systems. Its features make it suitable for high-efficiency switching in power supplies, lighting control, motor drivers, and renewable energy systems.

Equivalent

The NTMFWS1D5N08XT1G is a MOSFET from ON Semiconductor. Equivalent products include the IRF3205 from Infineon, the STP75NF75 from STMicroelectronics, and the BSS138 from Vishay in specific applications, but ensure compatibility with voltage, current ratings, and specific application requirements. Always check datasheets for precise electrical characteristics.