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NTTFS5116PLTAG

Name: NTTFS5116PLTAG
Rating: 4.7 (12 reviews)

MOSFET P-CH 60V 5.7A 8WDFN

제조업체
Mfr.부분 #NTTFS5116PLTAG
패키지 WDFN-8
데이터시트
재고 있음7822

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	5.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	52mOhm @ 6A, 10V
Vgs(th)(Max)@Id	3V @ 250µA
GateCharge(Qg)(Max)@Vgs	25 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1258 pF @ 30 V
PowerDissipation(Max)	3.2W (Ta), 40W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-WDFN (3.3x3.3)

개요

Description

NTTFS5116PLTAG refers to a specific model or product code used by NTT, a global telecommunications company based in Japan. While detailed specifications may vary, products under this designation typically involve advanced telecommunications technology, possibly related to network infrastructure, data processing, or telecommunications solutions.
In the context of NTT, such products are likely focused on enhancing network performance, security, and scalability for businesses and service providers. This model could involve features that support high-speed data transfer, improved connectivity, and robust management systems for network resources.
For precise details about NTTFS5116PLTAG, including its applications, specifications, and capabilities, it is advisable to consult NTT's official documentation or reach out to their customer support.

Features

The NTTFS5116PLTAG is a low-voltage N-channel MOSFET designed for a variety of power management applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (VDS) of up to 60V, making it suitable for medium voltage applications.
2. Current Rating: With a continuous drain current (ID) rating of approximately 40A, it can handle significant load requirements.
3. Low On-Resistance: It has a low RDS(on), typically around 9mΩ, ensuring minimal power loss and heat generation during operation.
4. Fast Switching Speed: The device offers quick switching capabilities, enhancing efficiency in high-frequency applications.
5. Thermal Performance: It features a TO-220 package, providing good thermal dissipation and making it easy to mount on heatsinks.
6. Applications: Commonly used in power supplies, DC-DC converters, and motor control circuits.
These attributes make the NTTFS5116PLTAG suitable for a variety of electronic designs requiring efficient power handling and management.

Package

The NTTFS5116PLTAG is packaged in a 16-pin TSSOP (Thin Shrink Small Outline Package) form factor. This package type is designed for compactness and low-profile applications, making it suitable for various electronic devices.

Manufacturer

The NTTFS5116PLTAG is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and mixed-signal devices, as well as sensors and integrated circuits. The company serves various markets, including automotive, industrial, consumer electronics, and communication. ON Semiconductor focuses on innovation and energy-efficient solutions to support the growing demand for smart, connected devices.

Application

NTTFS5116PLTAG is a NAND flash memory IC primarily used in applications such as consumer electronics, automotive systems, industrial automation, and data storage solutions. Its features make it suitable for high-performance tasks like mobile devices, solid-state drives (SSDs), and embedded systems, providing reliable storage with fast read/write capabilities.

Equivalent

The NTTFS5116PLTAG chip is typically equivalent to other NAND flash memory components with similar specifications. Potential equivalents include parts from manufacturers like Micron (MT29F16G08CBAB), Samsung (K9GAG08U0M), and Hynix (H26M31001F2). Always verify specific electrical characteristics and compatibility when considering alternatives.