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NVB190N65S3F
MOSFET N-CH 650V 20A D2PAK-3
- 제조업체
- Mfr.부분 #NVB190N65S3F
- 패키지
- 데이터시트 NVB190N65S3F DataSheet
- 재고 있음11825
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, SuperFET® III |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 5V @ 430µA |
| GateCharge(Qg)(Max)@Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1605 pF @ 400 V |
| PowerDissipation(Max) | 162W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK-3 (TO-263-3) |
개요
Description
This device features low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency. Additionally, it has a fast switching speed, making it ideal for applications requiring rapid switching cycles.
The NVB190N65S3F is built using advanced semiconductor technology, providing excellent thermal performance and reliability. Its typical applications include renewable energy systems, industrial equipment, and electric vehicles.
Overall, the NVB190N65S3F is a robust choice for engineers looking to improve the performance and efficiency of their power electronic designs.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 190A, allowing for high power handling.
3. R_DS(on): It has a low on-resistance (R_DS(on)), typically around 0.19 ohms, which minimizes conduction losses during operation.
4. Fast Switching: The device is optimized for fast switching speeds, making it ideal for applications such as power converters, inverters, and motor drives.
5. Thermal Performance: Good thermal performance with a maximum junction temperature of 175°C, allowing for reliable operation under demanding conditions.
6. Package: Usually available in a TO-247 package, facilitating effective heat dissipation.
These features make the NVB190N65S3F suitable for a range of industrial and consumer electronic applications requiring efficient power management.
Package
Pinout
1. Gate (G): This pin controls the MOSFET operation. A voltage applied here allows the MOSFET to turn on and conduct current between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. It is where the current exits the MOSFET.
The pin configuration typically follows the standard arrangement for power MOSFETs, facilitating easy integration into circuits. The device is primarily used in applications such as power management, switching, and amplification due to its high efficiency and fast switching capabilities.
Manufacturer
Application
1. Switching Power Supplies - For efficient voltage regulation.
2. Motor Drives - Inverters for electric motors.
3. DC-DC Converters - For energy conversion in various devices.
4. Power Management - In consumer electronics and automotive applications.
5. LED Drivers - For efficient light output control.
Its high voltage and current ratings make it suitable for demanding applications in industrial and automotive sectors.
Equivalent
배송
배송 방법We
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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