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NVMFS5C460NLWFT1G
MOSFET N-CH 40V 5DFN
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- Mfr.부분 #NVMFS5C460NLWFT1G
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365 일 보장
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사양
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Power Dissipation (Max) | 3.6W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS5 |
개요
Description
This MOSFET is characterized by its low on-resistance (R_DS(on)), which minimizes power loss during operation, and fast switching capabilities, enhancing overall efficiency. The device is housed in a compact package, typically a DPAK or similar, which aids in thermal management and ease of integration into circuit designs.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_g) that supports rapid switching rates. The NVMFS5C460NLWFT1G is particularly useful in applications such as DC-DC converters, power supplies, and automotive systems, where reliability and performance are critical.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various power management applications.
2. Current Rating: It can handle continuous drain current up to 55A, providing robust performance in demanding environments.
3. RDS(on): The on-resistance is as low as 4.6 mΩ, facilitating reduced power loss and improved thermal performance.
4. Gate Charge: It has a low gate charge, enhancing switching speed and efficiency in high-frequency applications.
5. Package Type: Packaged in a compact DPAK for efficient thermal dissipation and easy integration into circuits.
6. Applications: Ideal for DC-DC converters, motor drives, and power supplies.
Overall, the NVMFS5C460NLWFT1G is engineered for high-performance power applications, ensuring reliability and efficiency.
Package
Pinout
The function of the device includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Connects to the ground or power rail; serves as the return path for current.
4. Body Diode: Internal diode allows current to flow in the reverse direction when the MOSFET is off.
The device is optimized for low on-resistance and fast switching, making it suitable for applications such as power supplies, DC-DC converters, and motor drives. Its thermal performance and efficiency are critical for high-density designs.
Manufacturer
Application
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