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NVMFS5C645NLWFAFT1G
MOSFET N-CH 60V 22A 5DFN
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- Mfr.부분 #NVMFS5C645NLWFAFT1G
- 패키지
- 데이터시트 NVMFS5C645NLWFAFT1G DataSheet
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사양
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 50 V |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS5 |
개요
Description
Key characteristics include a maximum drain-source voltage of 60V and a continuous drain current rating of around 60A, depending on thermal conditions. Its fast switching capabilities allow for better performance in power conversion and control applications.
The device is packaged in a DPAK (TO-252) package, offering good thermal performance and ease of assembly.
Overall, the NVMFS5C645NLWFAFT1G is ideal for applications requiring reliable switching and high efficiency, such as DC-DC converters, motor drivers, and power supplies. Its design emphasizes robustness and low power losses, making it a popular choice among engineers in the power electronics field.
Features
1. Low On-Resistance (Rds(on)): This ensures minimal conduction losses, enhancing efficiency in power applications.
2. High Voltage Rating: Capable of handling significant voltage levels, suitable for various high-voltage applications.
3. Fast Switching Speed: Allows for quick transitions, which is essential in high-frequency applications.
4. Thermal Performance: It has good thermal characteristics that support operation over a wide temperature range.
5. Suitable for Logic Level Drive: Can be driven directly from logic-level signals, simplifying circuit designs.
6. Compact Package: Typically offered in a TO-220 or similar package, facilitating ease of integration into designs with limited space.
7. Robust Design: Engineered for durability in demanding environments.
These features make the NVMFS5C645NLWFAFT1G ideal for applications in power supplies, motor control, and other high-efficiency circuits.
Package
Pinout
The functions of its pins are as follows:
1. Gate (G) - Controls the switching of the transistor.
2. Drain (D) - The output where the load is connected; current flows out of this pin when the MOSFET is on.
3. Source (S) - The input where the current enters the transistor; it’s usually connected to ground or a lower voltage level.
4. Body Diode - Integrated within the MOSFET, allowing current to flow from drain to source when the MOSFET is off.
These components work together to allow the MOSFET to regulate electrical current effectively, providing a key function in various electronic systems.
Manufacturer
Application
Equivalent
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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