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PSMN013-100YSE
MOSFETs
- 제조업체
- Mfr.부분 #PSMN013-100YSE
- 패키지
- 데이터시트
- 재고 있음25496
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
PSMN013-100YSE is a course designed to introduce students to the principles and practices of project and supply chain management. The curriculum covers foundational concepts, methodologies, and tools essential for effective project execution and supply chain optimization. Topics may include project planning, risk management, inventory control, logistics, and sustainable practices.
Students will engage in case studies and practical exercises to apply theoretical knowledge to real-world scenarios. The course aims to equip participants with skills for managing complex projects and understanding the dynamics of supply chains in various industries.
By the end of the course, students should be able to analyze project performance, implement supply chain strategies, and effectively collaborate in multidisciplinary teams. This course is beneficial for those pursuing careers in management, operations, and logistics.
Students will engage in case studies and practical exercises to apply theoretical knowledge to real-world scenarios. The course aims to equip participants with skills for managing complex projects and understanding the dynamics of supply chains in various industries.
By the end of the course, students should be able to analyze project performance, implement supply chain strategies, and effectively collaborate in multidisciplinary teams. This course is beneficial for those pursuing careers in management, operations, and logistics.
Features
The PSMN013-100YSE is an N-channel MOSFET designed for various power management applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, suitable for high-voltage applications.
- Current Handling: The continuous drain current (Id) is rated at 13A, allowing it to handle significant loads.
- RDS(on): It offers a low on-resistance of approximately 0.013 ohms at Vgs = 10V, which minimizes power loss and improves efficiency.
- Package Type: The device comes in a SO-8 package, which is compact and suitable for surface-mount applications.
- Fast Switching: Designed for high-speed switching, it is ideal for applications like DC-DC converters and power supplies.
- Thermal Performance: It has robust thermal characteristics, with a peak junction temperature (Tj) of 175°C, ensuring reliability under thermal stress.
These features make the PSMN013-100YSE a versatile choice for various electronic circuits requiring efficient power management.
- Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, suitable for high-voltage applications.
- Current Handling: The continuous drain current (Id) is rated at 13A, allowing it to handle significant loads.
- RDS(on): It offers a low on-resistance of approximately 0.013 ohms at Vgs = 10V, which minimizes power loss and improves efficiency.
- Package Type: The device comes in a SO-8 package, which is compact and suitable for surface-mount applications.
- Fast Switching: Designed for high-speed switching, it is ideal for applications like DC-DC converters and power supplies.
- Thermal Performance: It has robust thermal characteristics, with a peak junction temperature (Tj) of 175°C, ensuring reliability under thermal stress.
These features make the PSMN013-100YSE a versatile choice for various electronic circuits requiring efficient power management.
Package
The PSMN013-100YSE is packaged in a TO-220 form factor, which is a common package type for power MOSFETs. It features a metal tab for heat dissipation and is designed for efficient thermal management in various electronic applications.
Pinout
The PSMN013-100YSE is an N-channel MOSFET with a total pin count of 4. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; a voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load current flows into the MOSFET from the external circuit.
3. Source (S): This pin connects to the ground or negative side of the power supply, allowing the current to exit the device.
4. Body Diode (intrinsic): Though not a pin, the device includes an intrinsic body diode that allows current to flow in the reverse direction, providing additional functionality in certain applications.
The PSMN013-100YSE is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds. Its features make it suitable for use in power management circuits, motor drives, and other electronic applications.
1. Gate (G): This pin is used to control the MOSFET; a voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load current flows into the MOSFET from the external circuit.
3. Source (S): This pin connects to the ground or negative side of the power supply, allowing the current to exit the device.
4. Body Diode (intrinsic): Though not a pin, the device includes an intrinsic body diode that allows current to flow in the reverse direction, providing additional functionality in certain applications.
The PSMN013-100YSE is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds. Its features make it suitable for use in power management circuits, motor drives, and other electronic applications.
Manufacturer
The PSMN013-100YSE is manufactured by NXP Semiconductors, a global semiconductor company. NXP specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, processors, and various types of transistors such as power MOSFETs like the PSMN013-100YSE. The company serves multiple markets, including automotive, industrial, and Internet of Things (IoT) applications, focusing on enabling secure connections and improving systems through innovative technology. NXP is known for its commitment to quality and reliability in its semiconductor solutions.
Application
PSMN013-100YSE is a power MOSFET commonly used in various applications including DC-DC converters, motor drive circuits, power management systems, and power supplies. Its characteristics make it suitable for high-efficiency switching applications in consumer electronics, automotive systems, and industrial automation.
Equivalent
The PSMN013-100YSE is an N-channel MOSFET. Equivalent products include the BSM300GA120DN2, IRF320, and STP16NM60. Ensure to verify specifications like voltage, current ratings, and package types when selecting alternatives. Always consult the datasheet for precise compatibility.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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