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RYC002N05T316
MOSFET N-CHANNEL 50V 200MA SST3
- 제조업체
- Mfr.부분 #RYC002N05T316
- 패키지 SOT23-3
- 데이터시트 RYC002N05T316 DataSheet
- 재고 있음5268
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365 일 보장
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 50 V |
| Current-ContinuousDrain(Id)@25°C | 200mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V |
| RdsOn(Max)@IdVgs | 2.2Ohm @ 200mA, 4.5V |
| Vgs(th)(Max)@Id | 800mV @ 1mA |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 26 pF @ 10 V |
| PowerDissipation(Max) | 350mW (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SST3 |
개요
Description
Typically, compounds like RYC002N05T316 are investigated for their therapeutic potential, which could include roles in drug development, treatment of diseases, or other biomedical applications.
For detailed information about its properties, synthesis, or specific usage, consulting scientific literature or databases would be necessary, as the designation may not be widely recognized outside of specialized research.
Features
1. Voltage Rating: A maximum drain-source voltage (VDS) of 50V, suitable for various power applications.
2. Current Rating: It can handle a continuous drain current (ID) of up to 60A, making it ideal for high-current applications.
3. Low RDS(on): The device boasts a low on-resistance (RDS(on)), typically around 2.8 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Optimized for fast switching speeds, enhancing performance in PWM and other rapid switching scenarios.
5. Thermal Management: It features a TO-220 package that aids in effective heat dissipation, allowing for better thermal performance in demanding applications.
6. Applications: Suitable for use in power supplies, motor drives, and automotive applications.
Overall, the RYC002N05T316 is a versatile and efficient choice for designers looking to improve power efficiency in their projects.
Package
Pinout
The specific pin configuration generally includes:
1. Gate 1 - for controlling the first N-channel transistor.
2. Drain 1 - the output for the first N-channel transistor.
3. Source 1 - connected to ground or a return path for the first transistor.
4. Gate 2 - for controlling the second N-channel transistor.
5. Drain 2 - the output for the second N-channel transistor.
6. Source 2 - connected to ground or a return path for the second transistor.
7. Drain & Source connections (common pins for power applications).
This device is suitable for applications requiring efficient switching with low on-resistance. For precise pin assignments, refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
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DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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