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S29GL01GT10FHI010
FLASH - NOR MEMORY IC 1GB (128M
- 제조업체
- Mfr.부분 #S29GL01GT10FHI010
- 패키지
- 데이터시트 S29GL01GT10FHI010 DataSheet
- 재고 있음2209
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Series | GL-T |
| Part Status | Active |
| Base Product Number | S29GL01 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
| Packaging | Tray |
| Access Time | 100 ns |
개요
Description
Key specifications include a supply voltage range of 2.7V to 3.6V, a maximum clock frequency of 66 MHz, and support for both asynchronous and synchronous operations. It also incorporates advanced features such as uniform erase sectors, enhanced data reliability, and extensive endurance capabilities.
The S29GL01GT10FHI010 is well-regarded for its scalability, with multiple chip enable options, making it versatile for different design requirements. Overall, it is an excellent choice for applications needing robust, high-speed non-volatile memory solutions.
Features
1. Density: 1 Gbit (128 MB) storage capacity.
2. Interface: Supports a high-speed parallel interface.
3. Access Time: Offers a range of access times (e.g., 70 ns, 90 ns), allowing for fast read operations.
4. Voltage: Operates on a supply voltage of 3.0V to 3.6V.
5. Program/Erase Cycles: Supports up to 100,000 program/erase cycles per sector, ensuring durability.
6. Data Retention: Promises data retention of up to 20 years.
7. Sector Architecture: Features a uniform sector architecture, allowing flexible erase and programming options.
8. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
9. Compatibility: Compatible with common programming standards, enhancing integration in designs.
This device is ideal for applications requiring non-volatile memory with fast access times and reliable data retention, such as in embedded systems and industrial applications.
Package
Pinout
The primary functions of the S29GL01GT10FHI010 include:
1. Data Storage: It provides non-volatile memory storage for code and data.
2. Memory Access: Supports byte-wide (8-bit) and word-wide (16-bit) data interfaces.
3. Fast Read/Write Operations: Allows fast read access times and supports page programming.
4. Erase Functions: Offers block-level erase capabilities to facilitate data management.
5. Robustness: Supports features like hardware write protection and an integrated data protection mechanism.
This device is commonly used in applications such as embedded systems, automotive, and consumer electronics, where reliable data storage is required.
Manufacturer
Application
Equivalent
1. Micron MT28EW1GAB - 1Gb NOR Flash
2. Winbond W25Q128JV - 128MB NOR Flash
3. Spansion S29GL01GS - Similar 1Gb NOR Flash with different configuration
Always verify specific features, voltage, and package compatibility for your application.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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