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S29GL512P11TFI010
NOR Flash 512Mb 3V 110ns Parallel NOR Flash
- 제조업체
- Mfr.부분 #S29GL512P11TFI010
- 패키지
- 데이터시트 S29GL512P11TFI010 DataSheet
- 재고 있음5448
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Packaging | Tray |
| Standard Pack Qty | 91 |
개요
Description
Key features include:
- High Density: Suitable for applications requiring substantial storage capacity.
- Fast Read Performance: Offering read speeds of up to 85 MHz.
- Flexibility: Supports various programming and erasing modes.
- Endurance and Reliability: Typically boasts over 100,000 program/erase cycles and data retention of up to 20 years.
Applications include automotive, industrial, consumer electronics, and telecommunications, where robust memory solutions are essential for firmware and software storage.
Features
- Memory Architecture: It utilizes a single-chip architecture with a 16-bit or 8-bit data bus.
- Access Time: Offers various access times, typically around 90 ns, allowing for quick read operations.
- High Reliability: Designed for high endurance, providing up to 100,000 program/erase cycles and data retention of over 20 years.
- Programming Flexibility: Supports sector-based programming with a flexible sector architecture, enabling efficient memory management.
- Operating Voltage: Operates at a supply voltage of 2.7V to 3.6V, suitable for low-power applications.
- Commands: Features a standard command set for read, write, and erase operations, facilitating easy integration into various systems.
- Package Options: Available in multiple package options, including TSOP and BGA, catering to different space and design requirements.
These attributes make the S29GL512P11TFI010 suitable for a wide range of applications, including embedded systems and consumer electronics.
Package
Pinout
Pin Functions:
1. Address Lines (A0-A18): Used for memory addressing.
2. Data Lines (DQ0-DQ7): Bidirectional data bus for input and output operations.
3. Control Signals:
- WE (Write Enable): Enables writing to the memory.
- RE (Read Enable): Enables reading from the memory.
- CE (Chip Enable): Activates the chip for operation.
- OE (Output Enable): Controls the output buffer for reading.
4. Reset Pin (RESET): Resets the device.
5. Vcc and GND: Power supply and ground connections.
6. Vpp: For programming voltage.
7. NC (No Connect): Unused pins.
This device supports asynchronous and synchronous operations, making it suitable for various applications requiring non-volatile memory storage.
Manufacturer
Application
Equivalent
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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