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S29GL512T10FHI010
IC FLASH 512MBIT PARALLEL 64FBGA
- 제조업체
- Mfr.부분 #S29GL512T10FHI010
- 패키지
- 데이터시트 S29GL512T10FHI010 DataSheet
- 재고 있음5975
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365 일 보장
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사양
| Series | GL-T |
| Part Status | Active |
| Base Product Number | S29GL512 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
| Packaging | Tray |
| Access Time | 100 ns |
개요
Description
1. Flash Memory Type: It uses a single-level cell (SLC) architecture for enhanced performance and endurance.
2. Interface: The device utilizes a parallel interface, supporting asynchronous and synchronous operations.
3. Voltage Range: Typically operates at a supply voltage of 2.7V to 3.6V, making it suitable for low-power applications.
4. Page Size: Contains a page size of 256 bytes with a sector architecture, allowing for efficient data management.
5. Endurance and Reliability: Offers high endurance (program/erase cycles) and supports various error correction mechanisms for data integrity.
6. Applications: Commonly used in embedded systems, telecommunications, automotive, and consumer electronics, where reliable and high-speed memory is needed.
This device is noted for its efficiency and speed, making it a popular choice in modern electronic designs.
Features
- Density: 512 Mb capacity, suitable for a variety of applications.
- Organization: It is organized as 64M x 8 bits.
- Access Time: Offers a fast access time of 10 ns, enhancing performance in high-speed applications.
- Interface: Compatible with standard NOR Flash memory protocols, supporting asynchronous burst read operations.
- Voltage: Operates at a single supply voltage of 3.0V to 3.6V.
- Endurance: Supports a minimum of 100,000 program/erase cycles, ensuring reliability for multiple write operations.
- Data Retention: Provides data retention of up to 20 years.
- Package Options: Available in various packages, including SOIC and BGA, for flexible integration in designs.
- Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
These features make the S29GL512T10FHI010 ideal for applications in automotive, industrial, and consumer electronics.
Package
Pinout
Pin functions include:
- Address Pins (A0-A20): Used to select the memory addresses.
- Data Pins (DQ0-DQ31): Bidirectional data bus for data input and output (32 bits wide).
- Control Pins:
- CE# (Chip Enable): Activates the device.
- OE# (Output Enable): Controls data output.
- WE# (Write Enable): Enables write operations.
- RESET#: Resets the device.
- VCC/VSS: Power supply and ground connections.
- RY/BY# (Ready/Busy): Indicates the status of memory operations.
- WP# (Write Protect): Protects the memory from accidental writes.
This device is used in embedded applications requiring high-density storage with fast read and write capabilities.
Manufacturer
Application
Equivalent
1. Micron MT28EW512ABA1 - 512 Mb NOR Flash
2. Winbond W25Q512 - 512 Mb Serial NOR Flash
3. Spansion S29GL512N - Similar specifications
4. STMicroelectronics M29W512 - 512 Mb NOR Flash
Ensure compatibility with your system's requirements before substitution.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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