S34ML08G201BHI000

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S34ML08G201BHI000

IC FLASH 8GBIT PARALLEL 63BGA

  • 제조업체
  • Mfr.부분 #S34ML08G201BHI000
  • 패키지 BGA-63
  • 데이터시트
  • 재고 있음7644

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package Tray
Series ML-2
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 8Gb (1G x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

개요

Description

The S34ML08G201BHI000 is a high-performance NAND flash memory device from Cypress Semiconductor (now part of Infineon Technologies). It is a 1 Gb (gigabit) memory chip, built on advanced 3D NAND technology, which allows for higher storage density and improved performance compared to traditional 2D NAND. This device is organized in a uniform block architecture, offering features such as fast read and write speeds, enhanced reliability, and low power consumption, making it suitable for a variety of applications including consumer electronics, industrial systems, and automotive devices.
The S34ML08G201BHI000 supports the ONFI (Open NAND Flash Interface) standard, which ensures compatibility with various host controllers. It provides features like error correction, wear leveling, and power management to ensure data integrity and longevity. Its compact form factor and efficient performance make it an ideal choice for applications requiring efficient data storage solutions.

Features

The S34ML08G201BHI000 is a NAND Flash memory chip from Cypress Semiconductor, designed for high-performance applications. Key features include:
1. Density: 8 Gb (1 GB) storage capacity.
2. Interface: Supports a Serial Peripheral Interface (SPI) for easy integration into various systems.
3. Organization: Configured as an 8-bit or 16-bit organization, allowing for flexible data handling.
4. Read Speed: High read speeds, typically around 104 MB/s, enhancing overall system performance.
5. Write Speed: Supports page programming and offers efficient write performance.
6. Endurance: Designed for high endurance with up to 100,000 program/erase cycles, making it suitable for demanding applications.
7. Operating Voltage: Typically operates at 2.7V to 3.6V, which allows for low power consumption.
8. Temperature Range: Suitable for industrial-grade applications with an extended temperature range.
Overall, the S34ML08G201BHI000 is ideal for applications requiring reliable, high-speed storage solutions, such as consumer electronics, automotive systems, and industrial devices.

Package

The S34ML08G201BHI000 is a 3D NAND flash memory device packaged in a FBGA (Fine Ball Grid Array) format. It typically features a 48-ball configuration for compact integration on PCBs, suitable for various applications like mobile devices and embedded systems.

Pinout

The S34ML08G201BHI000 is a NAND flash memory chip with a pin count of 48. It is designed for various applications, including smartphones, tablets, and embedded systems.
The primary functions of the chip include:
1. Data Storage: It provides high-density data storage, with a capacity of 8 Gb.
2. Read/Write Operations: It supports fast read and write operations, allowing for efficient data processing.
3. Erase Functionality: The chip allows for block-level erase operations, enabling efficient data management.
4. Interface: It typically uses a synchronous interface for communication, ensuring high-speed data transfers.
5. Power Management: The device includes features for low power consumption, making it suitable for battery-powered applications.
The S34ML08G201BHI000 is part of the S34M series, known for reliability and performance in the embedded memory market.

Manufacturer

The S34ML08G201BHI000 is manufactured by Sierra Semiconductor Corporation, a company known for producing memory devices, particularly NAND flash memory products. Sierra Semiconductor focuses on developing innovative memory solutions for various applications, including consumer electronics, automotive, and industrial sectors. Their products are designed for performance, reliability, and scalability, catering to the growing demand for data storage in modern technology. The company emphasizes research and development to enhance its product offerings and meet the evolving needs of the market.

Application

The S34ML08G201BHI000 is a NAND flash memory device designed for various applications, including smartphones, tablets, embedded systems, automotive electronics, consumer electronics, and industrial storage solutions. It offers high-density storage, fast data transfer rates, and reliable performance, making it suitable for applications requiring efficient and high-capacity flash memory.

Equivalent

The S34ML08G201BHI000 is a NAND flash memory chip. Equivalent products include:
1. S34ML08G201BHI000 - Original
2. S34ML08G201BHI1 - Slight variation in specs
3. MT29F8G08ABAEAWP - Micron NAND
4. K9GAG08U0M - Samsung NAND
Always verify compatibility with specific application requirements before substitution.

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DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.

FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.

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