SCT055W65G3-4AG

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SCT055W65G3-4AG

TO247-4

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  • Mfr.부분 #SCT055W65G3-4AG
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사양

Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 72mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 721 pF @ 40 V
Power Dissipation (Max) 210W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
Base Product Number SCT055

개요

Description

The term "SCT055W65G3-4AG" appears to be a code related to meteorology, possibly used in aviation weather reports. Decoding it:
- SCT055: This indicates "scattered" clouds with a base at 5,500 feet above ground level.
- W65G3-4AG: This part is less standard and could represent additional weather data.
- W65: Possibly indicates wind direction and speed, but this is speculative without more context. Typically, winds are noted separately using degrees and speed in knots (e.g., 25015KT for wind from 250 degrees at 15 knots).
- G3-4AG: Could denote gusts and additional weather phenomena, but the coding is non-standard.
Overall, this code likely forms part of a METAR or similar aviation weather report, providing information on cloud cover, possibly wind conditions, and other atmospheric phenomena. For accurate interpretation, consult regional aviation weather guidelines or a detailed meteorological code reference.

Features

The SCT055W65G3-4AG is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications. Key features of this component include:
1. High Efficiency: It's designed to deliver superior efficiency due to low conduction and switching losses, characteristic of SiC technology.
2. High Power Density: The device can handle higher power densities, making it suitable for compact designs.
3. High-Speed Switching: It offers fast switching capabilities, reducing switching losses and enabling higher frequency operation.
4. High Temperature Operation: SiC MOSFETs like the SCT055W65G3-4AG can operate at higher temperatures compared to traditional silicon devices, improving reliability in demanding applications.
5. Robustness and Reliability: It features a high breakdown voltage and is robust against short-circuit conditions.
6. Compact Design: Its compact package enables space-saving in power systems.
These features make the SCT055W65G3-4AG ideal for use in applications such as power supplies, inverters, and motor drives where efficiency, compactness, and reliability are crucial.

Package

The SCT055W65G3-4AG is a silicon carbide (SiC) power MOSFET. Its package type is typically a TO-247, which is a through-hole package commonly used for high-power semiconductor devices. For specific details, you should refer to the datasheet provided by the manufacturer.

Pinout

The SCT055W65G3-4AG is a silicon carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It features a compact design ideal for high-efficiency power switching applications. The pin count for this MOSFET is typically 3, consisting of the standard connections:
1. Gate (G): Controls the turning on and off of the MOSFET. By applying a voltage to the gate, you can modulate the conductivity between the drain and source.
2. Drain (D): The terminal through which the main current flows from the source when the MOSFET is activated.
3. Source (S): The terminal through which current exits the MOSFET. It is usually connected to a common ground or negative voltage in a circuit.
These pins enable the MOSFET to operate as a switch or amplifier in various electronic circuits, benefiting from SiC technology's high-speed switching, low on-resistance, and high thermal conductivity, which enhance energy efficiency and thermal performance.

Manufacturer

The SCT055W65G3-4AG is a product from STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products, including discrete and analog devices, microcontrollers, sensors, power management chips, and more. The company serves a wide array of industries, including automotive, industrial, personal electronics, and communication equipment sectors. STMicroelectronics is known for its innovation and contributions to the advancement of technology in various fields.

Application

The SCT055W65G3-4AG is a silicon carbide MOSFET designed for high-efficiency power applications. Its application areas include electric vehicle powertrains, renewable energy systems like solar inverters, industrial motor drives, and power supplies. It is used in systems where high efficiency, compact size, and reduced heat generation are critical.

Equivalent

The SCT055W65G3-4AG is a silicon carbide (SiC) MOSFET. Equivalent products may include SiC MOSFETs from other manufacturers with similar voltage and current ratings, such as the Wolfspeed C3M0065090J, Infineon IMZA65R027M1H, and ROHM SCT3060AR. It is crucial to compare specifications, including voltage, current, on-resistance, and switching speeds, to ensure compatibility with your application. Always consult datasheets for precise matching.

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