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SCT3120ALGC11
SICFET N-CH 650V 21A TO247N
- 제조업체
- Mfr.부분 #SCT3120ALGC11
- 패키지 TO-247-3
- 데이터시트 SCT3120ALGC11 DataSheet
- 재고 있음5849
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사양
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V |
| RdsOn(Max)@IdVgs | 156mOhm @ 6.7A, 18V |
| Vgs(th)(Max)@Id | 5.6V @ 3.33mA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 18 V |
| Vgs(Max) | +22V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 460 pF @ 500 V |
| PowerDissipation(Max) | 103W (Tc) |
| OperatingTemperature | 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247N |
개요
Description
The SCT3120ALGC11 features a low on-resistance, enabling effective power control and reduced energy losses during operation. Its wide bandgap semiconductor material allows for high voltage and temperature operation, providing significant advantages over traditional silicon-based MOSFETs.
This component is specifically engineered for applications requiring fast switching and low switching losses, such as renewable energy systems, electric vehicles, and power supplies. It is encapsulated in a robust package, ensuring reliability and durability in challenging environments.
In summary, the SCT3120ALGC11 represents a cutting-edge solution for improving efficiency and performance in high-power applications, leveraging the unique properties of silicon carbide technology.
Features
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) of up to 50A, depending on the thermal management.
3. Low On-Resistance: Features a low R_DS(on), reducing power losses and improving efficiency during operation.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Package Type: Available in a compact package, facilitating easier integration into circuit designs.
6. Thermal Performance: Good thermal stability, allowing for reliable operation under varying conditions.
7. Gate Threshold Voltage: Optimized for low gate voltage drive, suitable for interfacing with microcontrollers.
These attributes make the SCT3120ALGC11 an ideal choice for various electronic applications, particularly in power supplies, motor control, and LED drivers.
Package
Pinout
Pin Functions:
1. Gate (G1): Controls the MOSFET's on/off state for the first channel.
2. Drain (D1): The output terminal for the first channel, where current flows out.
3. Source (S1): The input terminal for the first channel, where current enters.
4. Gate (G2): Controls the MOSFET's on/off state for the second channel.
5. Drain (D2): The output terminal for the second channel.
6. Source (S2): The input terminal for the second channel.
7. Common Source (CS): The common source pin for both channels, often connected to the ground.
8. Tab (T): The package tab, used for heat dissipation.
This configuration allows for effective switching and power management in various electronic applications.
Manufacturer
Application
Equivalent
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