이미지는 참조용만

SI2305DS-T1-E3

Name: SI2305DS-T1-E3
Rating: 4.7 (12 reviews)

MOSFET P-CH 8V 3.5A SOT23-3

제조업체
Mfr.부분 #SI2305DS-T1-E3
패키지
데이터시트
재고 있음7289

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Supplier	Vishay Siliconix
Package	Cut Tape (CT)
ProductStatus	Obsolete
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	8 V
Current-ContinuousDrain(Id)@25°C	3.5A (Ta)
RdsOn(Max)@IdVgs	52mOhm @ 3.5A, 4.5V
Vgs(th)(Max)@Id	800mV @ 250µA
GateCharge(Qg)(Max)@Vgs	15 nC @ 4.5 V
InputCapacitance(Ciss)(Max)@Vds	1245 pF @ 4 V
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3 (TO-236)

개요

Description

The SI2305DS-T1-E3 is a N-channel MOSFET designed for low-voltage applications. It features low on-resistance (R_DS(on)), which enables efficient power management and reduced heat generation. Typically used in DC-DC converters, battery management systems, and load switching, the device supports high-speed switching and is suitable for various consumer electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 18A. The MOSFET comes in a compact SO-8 package, facilitating space-saving designs in printed circuit boards (PCBs). Its robust thermal performance allows for reliable operation in demanding environments.
The SI2305DS-T1-E3 also features a fast switching speed, making it ideal for applications requiring rapid response times. Overall, it is a versatile component for engineers looking to enhance efficiency and performance in their electronic designs.

Features

The SI2305DS-T1-E3 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of low-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 9.5A, allowing it to manage significant loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.045 ohms at V_GS = 10V, which enhances efficiency by reducing power loss.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is between 1V and 3V, making it suitable for logic-level applications.
5. Package: It is available in a compact SO-8 package, facilitating efficient thermal management and PCB space savings.
6. Fast Switching Speed: The device supports high-frequency switching, beneficial in applications like DC-DC converters and motor control.
Overall, the SI2305DS-T1-E3 is a versatile choice for power management in electronic circuits.

Package

The SI2305DS-T1-E3 is packaged in a small SOT-23 surface-mount package. This compact package design allows for efficient use of space on printed circuit boards while providing good thermal performance.

Pinout

The SI2305DS-T1-E3 is a N-channel MOSFET with a pin count of 8. It typically features the following pin configuration:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal through which current flows to the load.
3. Source (S) - The terminal through which current enters the MOSFET.
The specific pinout functions are as follows:
- Pins 1 and 2 (Gate): These pins are used for the control signal to turn the MOSFET on or off.
- Pins 3 and 4 (Drain): These pins connect to the load and carry the output current.
- Pins 5 and 6 (Source): These pins connect to the ground or the power source.
The device is designed for applications requiring low on-resistance and high-speed switching, making it suitable for power management and circuit protection in various electronic devices.

Manufacturer

The SI2305DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in providing a wide range of products, including diodes, resistors, capacitors, and MOSFETs, which are crucial for electronic devices and systems in various sectors such as automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its innovation and quality in the electronics industry, making it a key player in supplying components for modern technology applications.

Application

The SI2305DS-T1-E3 is a N-channel MOSFET primarily used in low-voltage applications such as power management, DC-DC converters, load switching, and battery management systems. Its features enable efficient power handling in consumer electronics, automotive systems, and industrial applications. Additionally, it can be used in switching circuits and for controlling motors and relays.

Equivalent

The SI2305DS-T1-E3 is an N-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and 2N7000. For more specific replacements, consider parameters like V_DS, I_D, and R_DS(on) to ensure compatibility. Always verify datasheets for exact specifications.