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SI3440DV-T1-GE3
MOSFET N-CH 150V 1.2A 6TSOP
- 제조업체
- Mfr.부분 #SI3440DV-T1-GE3
- 패키지
- 데이터시트
- 재고 있음6544
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사양
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.14W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | SI3440 |
개요
Description
This component may be available from suppliers like Vishay, ON Semiconductor, or other reputable manufacturers, known for offering a range of discrete semiconductors. Such components are used in various applications, including power management, automotive electronics, and consumer electronics, where efficient switching and robust performance are needed. For engineers and designers, understanding the electrical and thermal characteristics of the SI3440DV-T1-GE3 is crucial for optimal integration into their projects. Always ensure compatibility with your circuit's requirements and consider any design notes or application guidelines provided by the manufacturer.
Features
1. N-Channel MOSFET: It is an N-channel device, which means it conducts when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The device is designed with low on-resistance, enhancing its efficiency by minimizing power loss during operation.
3. High Current Capability: It supports a high current load, making it suitable for applications requiring significant power delivery.
4. Small Form Factor: The MOSFET is housed in a compact package, which is advantageous for space-constrained applications.
5. Fast Switching: It offers fast switching speeds, improving the efficiency of electronic circuits by reducing switching losses.
6. Thermal Performance: Enhanced thermal performance allows it to handle higher power levels while maintaining reliability.
7. Applications: Ideal for use in power management, DC-DC converters, and other applications requiring efficient power switching.
This combination of features makes the SI3440DV-T1-GE3 a versatile choice for designers looking to optimize power efficiency in electronic systems.
Package
Pinout
In terms of pin count, the SI3440DV-T1-GE3 is encapsulated in a standard SOT-23 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will enable the MOSFET to conduct between the drain and source terminals.
2. Source (S): This is the terminal through which the MOSFET channel current flows when the device is turned on.
3. Drain (D): The drain is the terminal where the device outputs current when it is conducting.
The SI3440DV-T1-GE3 is designed for low-voltage applications and is appreciated for its low on-resistance characteristics, making it suitable for efficient power switching.
Manufacturer
Application
Equivalent
1. FDS6679 from ON Semiconductor
2. IRF7416 from Infineon
3. NTD2955 from Fairchild
Check datasheets to ensure compatibility.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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