SI3440DV-T1-GE3

이미지는 참조용만

SI3440DV-T1-GE3

MOSFET N-CH 150V 1.2A 6TSOP

  • 제조업체
  • Mfr.부분 #SI3440DV-T1-GE3
  • 패키지
  • 데이터시트
  • 재고 있음6544

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number SI3440

개요

Description

The SI3440DV-T1-GE3 is likely a semiconductor component used in electronic circuits, such as a MOSFET or a diode. When dealing with specific part numbers like this, it's essential to consult the manufacturer's datasheet for detailed specifications, features, and applications. Key characteristics typically include voltage and current ratings, package type, switching speed, and thermal performance.
This component may be available from suppliers like Vishay, ON Semiconductor, or other reputable manufacturers, known for offering a range of discrete semiconductors. Such components are used in various applications, including power management, automotive electronics, and consumer electronics, where efficient switching and robust performance are needed. For engineers and designers, understanding the electrical and thermal characteristics of the SI3440DV-T1-GE3 is crucial for optimal integration into their projects. Always ensure compatibility with your circuit's requirements and consider any design notes or application guidelines provided by the manufacturer.

Features

The SI3440DV-T1-GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient power management in electronic devices. Key features include:
1. N-Channel MOSFET: It is an N-channel device, which means it conducts when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The device is designed with low on-resistance, enhancing its efficiency by minimizing power loss during operation.
3. High Current Capability: It supports a high current load, making it suitable for applications requiring significant power delivery.
4. Small Form Factor: The MOSFET is housed in a compact package, which is advantageous for space-constrained applications.
5. Fast Switching: It offers fast switching speeds, improving the efficiency of electronic circuits by reducing switching losses.
6. Thermal Performance: Enhanced thermal performance allows it to handle higher power levels while maintaining reliability.
7. Applications: Ideal for use in power management, DC-DC converters, and other applications requiring efficient power switching.
This combination of features makes the SI3440DV-T1-GE3 a versatile choice for designers looking to optimize power efficiency in electronic systems.

Package

The SI3440DV-T1-GE3 is a MOSFET component housed in a DPAK (TO-252) package.

Pinout

The SI3440DV-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is typically used in power management applications such as DC-DC converters, load switches, and power supply designs. The device features a single N-channel MOSFET.
In terms of pin count, the SI3440DV-T1-GE3 is encapsulated in a standard SOT-23 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will enable the MOSFET to conduct between the drain and source terminals.
2. Source (S): This is the terminal through which the MOSFET channel current flows when the device is turned on.
3. Drain (D): The drain is the terminal where the device outputs current when it is conducting.
The SI3440DV-T1-GE3 is designed for low-voltage applications and is appreciated for its low on-resistance characteristics, making it suitable for efficient power switching.

Manufacturer

The SI3440DV-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, resistors, capacitors, and inductors, which are used in various electronic devices and systems across industries such as automotive, industrial, consumer electronics, telecommunications, and computing. Vishay is known for its innovation and reliability in electronic component manufacturing.

Application

The SI3440DV-T1-GE3 is a MOSFET transistor commonly used in power management applications. Its typical application areas include DC-DC converters, power supply units, motor drives, and battery protection circuits. It's particularly suited for use in portable electronics, consumer electronics, and industrial devices where efficient power switching and management are required. The component's low on-resistance and fast switching capabilities make it ideal for applications that demand high efficiency and compact size.

Equivalent

The SI3440DV-T1-GE3 is a P-channel MOSFET from Vishay. Equivalent products from other manufacturers might include similar P-channel MOSFETs with comparable voltage, current, and package specifications. Potential alternatives could be:
1. FDS6679 from ON Semiconductor
2. IRF7416 from Infineon
3. NTD2955 from Fairchild
Check datasheets to ensure compatibility.

배송

배송 방법We

DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.


배송 요금 참조 (DHL/FedEx):

DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.

FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.

등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.

지불

Payment Methods

지불 기간은 100% 사전 지불입니다.

현재, 우리는 아래 지불 방법만 받아들입니다.:

1. PayPal

2. 신용/직불 카드

3. 전선 전송