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SI4403CDY-T1-GE3

Name: SI4403CDY-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET P-CH 20V 13.4A 8SO

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Mfr.부분 #SI4403CDY-T1-GE3
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사양

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	20 V
Current-ContinuousDrain(Id)@25°C	13.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	1.8V, 4.5V
RdsOn(Max)@IdVgs	15.5mOhm @ 9A, 4.5V
Vgs(th)(Max)@Id	1V @ 250µA
GateCharge(Qg)(Max)@Vgs	90 nC @ 8 V
Vgs(Max)	±8V
InputCapacitance(Ciss)(Max)@Vds	2380 pF @ 10 V
PowerDissipation(Max)	5W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-SOIC

개요

Description

SI4403CDY-T1-GE3 is a single N-channel enhancement-mode MOSFET from Vishay Siliconix. It’s used as a compact power switch in applications like DC-DC converters, load switches, motor/LED drivers, and similar power-management tasks. The GE3 suffix indicates RoHS-compliant, lead-free, tape-and-reel packaging (T1). In use, it behaves as a low-impedance switch when the gate is driven above threshold; the source is usually tied to ground (low-side) or connected to the return node with proper gate drive for high-side use. Key specs to verify in the datasheet are the drain-source voltage rating (Vds), continuous drain current (Id), on-resistance (Rds(on)) at your gate voltage, gate-threshold voltage, total gate charge, and thermal characteristics (RθJA). For exact electrical values and packaging details, consult the Vishay datasheet for SI4403CDY-T1-GE3.

Package

SI4403CDY-T1-GE3 uses a 6‑pin SC‑70/SOT‑23‑6 package.

Pinout

- Pin count: 8 pins (8-pin package, e.g., SOIC/TSSOP style)
- Function: Dual N-channel MOSFET device (two MOSFETs in one package for power switching)

Manufacturer

Manufacturer: Vishay Intertechnology (SiA/Vishay Siliconix).
What kind of company: Vishay is a global electronics manufacturer specializing in discrete semiconductors (MOSFETs, diodes, ICs) and passive components (resistors, capacitors, inductors), headquartered in Malvern, Pennsylvania, USA.

Application

SI4403CDY-T1-GE3 is a dual N-channel MOSFET used for power switching. Typical applications:
- Synchronous buck/boost DC-DC converters
- High-side/low-side rail switches
- Battery-management and protection circuits
- Motor control and gate-drive circuits
- Automotive and industrial power management
- Solar/battery inverters and other switching regulator circuits

Equivalent

I don’t have web access to look up exact cross-references. Please paste the SI4403CDY-T1-GE3 datasheet or give key specs (VDS, ID, RDS(on), package). With that I can list direct equivalents from major manufacturers (IRF/Infineon, ON Semi, ROHM, Alpha & Omega, Diodes Inc.) quickly.