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SI4410BDY-T1-E3
MOSFET N-CH 30V 7.5A 8SO
- 제조업체
- Mfr.부분 #SI4410BDY-T1-E3
- 패키지 SOIC-8
- 데이터시트
- 재고 있음3526
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 13.5mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 5 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.4W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 10A, depending on the thermal management. The SI4410BDY-T1-E3 is packaged in a compact SO-8 format, allowing for efficient use of space in circuitry. Its fast switching capabilities contribute to improved performance in power conversion applications.
Overall, this MOSFET is a reliable choice for engineers looking to optimize power efficiency and performance in their designs.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The device supports continuous drain current (I_D) up to 10A, depending on the thermal conditions.
3. On-Resistance (R_DS(on)): Low on-resistance of typically 0.014Ω at V_GS = 10V, which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1V to 2.5V, suitable for low-voltage applications.
5. Fast Switching Speed: Designed for high-speed operation, making it suitable for applications like DC-DC converters and motor drives.
6. Thermal Resistance: Good thermal performance with low junction-to-ambient thermal resistance, enhancing reliability in thermal management.
7. Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI4410BDY-T1-E3 suitable for various consumer and industrial applications.
Package
Pinout
1. Gate: Controls the MOSFET's switching.
2. Drain: Connects to the load; current flows out from this pin.
3. Source: Connects to ground or the negative side of the power supply.
4. Gate: (Second occurrence) For signal input or redundancy in design.
5. Drain: (Second occurrence) For load connection; allows for parallel configurations.
6. Source: (Second occurrence) For additional grounding or current path options.
7. N/C: Not connected; can be left open.
8. N/C: (Second occurrence) Not connected; can also be left open.
The SI4410BDY-T1-E3 is commonly used in power management and motor control applications, providing low R_DS(on) for efficient performance.
Manufacturer
Application
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