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SI4423DY-T1-E3
MOSFET P-CH 20V 10A 8SO
- 제조업체
- Mfr.부분 #SI4423DY-T1-E3
- 패키지
- 데이터시트
- 재고 있음3794
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사양
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 14A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 5 V |
| Vgs (Max) | ±8V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | SI4423 |
개요
Description
1. N-Channel MOSFET: This indicates it has an N-type semiconductor channel, which is typically used in many switching applications due to its ease of control and efficiency.
2. Low On-Resistance: The SI4423DY-T1-E3 offers low on-resistance, which minimizes power loss and improves efficiency in the circuit.
3. Surface-Mount Design: It is available in a surface-mount package, making it suitable for compact and high-density circuit designs.
4. High-Speed Switching: It provides fast switching speeds, which is beneficial in applications requiring quick response times.
5. Thermal Performance: Designed to handle significant power levels with good thermal performance, ensuring reliable operation under demanding conditions.
6. Applications: Commonly used in DC-DC converters, power management in portable devices, and other electronic applications requiring efficient power control.
The "T1-E3" suffix generally refers to packaging and environmental compliance specifications, such as being lead-free and RoHS compliant.
Features
1. Low On-Resistance: Offers low on-state resistance (R_DS(on)) for reduced power loss, improving efficiency in power conversion systems.
2. High Current Capacity: Can handle continuous drain currents up to 14A, making it suitable for high-current applications.
3. Voltage Ratings: Supports a maximum drain-source voltage (V_DS) of 30V, accommodating a range of voltage requirements.
4. Fast Switching: Designed for rapid switching with minimal delay, enhancing performance in high-frequency applications.
5. SO-8 Package: Comes in a standard SO-8 package for compact and space-efficient board designs.
6. Thermal Performance: Features good thermal performance, allowing for effective heat dissipation and reliability under load.
These characteristics make the SI4423DY-T1-E3 appropriate for applications like DC-DC converters, load switches, and other power management tasks.
Package
Pinout
This particular MOSFET comes in an SOIC-8 package, which means it has a total of 8 pins. The pin configuration is typically as follows:
1. Drain 1: Connected to the drain of the first N-channel MOSFET.
2. Source 1: Connected to the source of the first N-channel MOSFET.
3. Gate 1: Connected to the gate of the first N-channel MOSFET.
4. Source 2: Connected to the source of the second N-channel MOSFET.
5. Gate 2: Connected to the gate of the second N-channel MOSFET.
6. Drain 2: Connected to the drain of the second N-channel MOSFET.
7. Drain 2: Another connection to the drain of the second N-channel MOSFET.
8. Drain 1: Another connection to the drain of the first N-channel MOSFET.
The device is used in various applications, including load switching and low-voltage power management due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
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