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SI4425BDY-T1-E3
MOSFET P-CH 30V 8.8A 8SO
- 제조업체
- Mfr.부분 #SI4425BDY-T1-E3
- 패키지
- 데이터시트
- 재고 있음3208
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365 일 보장
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사양
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | SI4425 |
개요
Description
Key features of the SI4425BDY-T1-E3 include a low on-resistance, which minimizes power loss and heat generation, thus enhancing device efficiency. It typically operates at a voltage of 30V with a continuous drain current of around 13A. The device's design allows for low gate charge, improving overall switching performance.
The SI4425BDY-T1-E3 is housed in a compact SO-8 package, which is ideal for space-constrained applications. Its robust construction ensures reliability and long-term performance in various operating environments.
Overall, the SI4425BDY-T1-E3 is a versatile and efficient choice for power management applications where high-speed switching and low power loss are crucial.
Features
1. P-Channel MOSFET: Allows for easier high-side switching in circuits.
2. Low On-Resistance: With an R_DS(on) typically around 0.008 ohms, it minimizes power loss and enhances efficiency.
3. Voltage Rating: Can handle a drain-source voltage (V_DS) of up to -30V.
4. Current Handling: Supports continuous drain current (I_D) up to -12A.
5. Compact Package: Comes in an SO-8 surface-mount package, making it suitable for space-constrained designs.
6. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability in various environments.
7. Enhanced ESD Protection: Provides increased robustness against electrostatic discharge.
8. Lead-Free and RoHS Compliant: Environmentally friendly, adhering to current manufacturing standards.
These features make the SI4425BDY-T1-E3 a versatile component for applications such as power management in portable devices, DC-DC converters, and load switching.
Package
Pinout
1. Pin 1, 2, 3 (Source 1): These pins are internally connected and serve as the source terminal for the first MOSFET.
2. Pin 4 (Gate 1): This pin is used to control the gate of the first MOSFET.
3. Pin 5 (Gate 2): This pin is used to control the gate of the second MOSFET.
4. Pin 6, 7, 8 (Source 2): These pins are internally connected and serve as the source terminal for the second MOSFET.
The drain of each MOSFET is connected internally to the tab of the package, which acts as a heat sink. The SI4425BDY is typically used in switching applications due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
1. IRF7343 by Infineon - A similar dual N-channel MOSFET.
2. FDS6679 by ON Semiconductor - Another dual N-channel MOSFET with comparable specifications.
3. NTMFS4935N by ON Semiconductor - Offers similar performance characteristics.
Ensure to compare specific parameters like voltage, current ratings, Rds(on), and package type for compatibility.
배송
배송 방법We
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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