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SI4948BEY-T1-E3
MOSFET 2P-CH 60V 2.4A 8-SOIC
- 제조업체
- Mfr.부분 #SI4948BEY-T1-E3
- 패키지 SOIC-8
- 데이터시트 SI4948BEY-T1-E3 DataSheet
- 재고 있음7656
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배송 준비 24 시간
365 일 보장
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 2.4A |
| RdsOn(Max)@IdVgs | 120mOhm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22nC @ 10V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 62A, and a low R_DS(on) value, ensuring minimal power loss. The device is housed in a compact SOIC-8 package, which aids in space-constrained designs. Its robust thermal performance and reliability make it a preferred choice among engineers for enhancing system efficiency and overall performance in electronic designs.
Overall, the SI4948BEY-T1-E3 is an effective solution for modern power management needs, combining versatility and reliability in one package.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. On-Resistance (R_DS(on)): The device offers low on-resistance, typically around 8.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
3. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 50A, allowing it to drive high loads.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, making it ideal for applications such as synchronous rectification and DC-DC converters.
5. Package: Available in a compact SO-8 package, enabling efficient space utilization on PCBs.
6. Thermal Performance: It features good thermal characteristics, supporting effective heat dissipation.
These features make the SI4948BEY-T1-E3 suitable for automotive, industrial, and consumer electronics applications.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
4. Body Diode: Internal diode for inductive loads.
The SI4948BEY-T1-E3 features a maximum continuous drain current of 48A and low R_DS(on) for improved thermal performance. It is housed in a compact surface-mount package, making it suitable for space-constrained designs.
Manufacturer
Application
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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