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SI7113ADN-T1-GE3

Name: SI7113ADN-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET P-CH 100V 10.8A PPAK

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Mfr.부분 #SI7113ADN-T1-GE3
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데이터시트 SI7113ADN-T1-GE3 DataSheet
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사양

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	10.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	132mOhm @ 3.8A, 10V
Vgs(th)(Max)@Id	2.6V @ 250µA
GateCharge(Qg)(Max)@Vgs	16.5 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	515 pF @ 50 V
PowerDissipation(Max)	27.8W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PowerPAK® 1212-8

개요

Description

The SI7113ADN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features low on-resistance and fast switching capabilities, making it suitable for power management, DC-DC converters, and motor control. With a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) rating of 62A, it is ideal for applications that require efficient power handling.
The device is housed in a compact SO-8 package, which makes it easy to integrate into various circuits while optimizing space. Its low gate threshold voltage allows for effective drive from standard logic levels, enhancing versatility in design. Additionally, the SI7113ADN-T1-GE3 is valued for its thermal performance, enabling it to operate effectively under high-temperature conditions.
Overall, the SI7113ADN-T1-GE3 is a reliable choice for engineers seeking a robust MOSFET solution for energy-efficient electronic designs.

Features

The SI7113ADN-T1-GE3 is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: Capable of handling a continuous drain current (ID) of up to 45A, making it suitable for high-power circuits.
3. On-Resistance (RDS(on)): Low on-resistance of approximately 8.5 mΩ at a gate voltage (VGS) of 10V, which ensures minimal power loss during operation.
4. Package Type: Available in a compact DPAK package, facilitating easy integration into circuit designs.
5. Fast Switching Speeds: Suitable for efficient switching applications due to its fast turn-on and turn-off characteristics.
6. Thermal Performance: Good thermal management capabilities, allowing it to operate effectively under high temperatures.
Overall, the SI7113ADN-T1-GE3 is ideal for automotive, industrial, and consumer electronics applications requiring robust performance and efficiency.

Package

The SI7113ADN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format.

Pinout

The SI7113ADN-T1-GE3 is a high-speed, low on-resistance N-channel MOSFET with a pin count of 8. Its primary functions include power switching and signal amplification in various applications such as DC-DC converters and motor control.
The pin configuration is as follows:
1. Gate - Controls the MOSFET operation.
2. Drain - Connects to the load for current flow.
3. Source - Connects to the ground or negative side of the power supply.
4. Drain - Additional drain pin for configurations that require multiple connections.
5. Source - Additional source pin for configurations that require multiple connections.
6. GND - Ground reference.
7. VDD - Power supply input.
8. N/C - Not connected (can be left open).
The device is designed for low voltage, high current applications with features like low gate charge and fast switching speed. It is suitable for various industrial and consumer electronic devices.

Manufacturer

The manufacturer of the SI7113ADN-T1-GE3 is Silicon Labs, a company known for its focus on semiconductor products and solutions. Silicon Labs specializes in providing a wide range of products, including microcontrollers, sensors, wireless connectivity, and power management solutions. They cater to various markets such as IoT (Internet of Things), industrial automation, consumer electronics, and automotive applications. The SI7113ADN-T1-GE3 itself is a high-performance MOSFET driver, indicating Silicon Labs' expertise in developing efficient power management components. The company is recognized for innovation and high-quality products in the semiconductor industry.

Application

The SI7113ADN-T1-GE3 is an N-channel MOSFET used in various applications, including DC-DC converters, power management systems, battery management, and load switching. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power solutions in consumer electronics, automotive, and industrial equipment. Additionally, it is utilized in energy harvesting and renewable energy systems.

Equivalent

The SI7113ADN-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000. For direct replacements, consider other N-channel MOSFETs with similar voltage and current ratings (e.g., 30V, 2.3A) and comparable R_DS(on) values. Always check the datasheet for specific parameters to ensure compatibility.