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SI7336ADP-T1-E3
MOSFET N-CH 30V 30A PPAK SO-8
- 제조업체
- Mfr.부분 #SI7336ADP-T1-E3
- 패키지 PowerPAK-SO-8
- 데이터시트 SI7336ADP-T1-E3 DataSheet
- 재고 있음6184
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 30A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5600 pF @ 15 V |
| PowerDissipation(Max) | 5.4W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
This MOSFET is housed in a compact SOIC-8 package, facilitating easy integration into space-constrained designs. Its fast switching speeds contribute to efficient operation in high-frequency applications. The SI7336ADP-T1-E3 is also characterized by its excellent thermal stability, ensuring reliable performance under varying temperature conditions.
Overall, this component is ideal for designers looking to enhance energy efficiency and performance in their electronic systems.
Features
1. Voltage Rating: 30V maximum drain-to-source voltage (Vds).
2. Current Rating: Capable of handling continuous drain current (Id) up to 62A.
3. Low Rds(on): Features a low on-resistance of 6.2 mΩ at Vgs of 10V, enhancing efficiency and reducing power losses.
4. Fast Switching: Optimized for fast switching speeds, making it suitable for various power management applications.
5. Thermal Performance: Integrated thermal characteristics with a low thermal resistance, allowing for better heat dissipation.
6. Package Type: Offered in a compact SO-8 package, facilitating space-saving designs.
7. Gate Threshold Voltage (Vgs(th)): Appropriately low threshold voltage, enabling efficient operation with low gate voltages.
8. Applications: Ideal for use in DC-DC converters, power management, and motor control applications.
Overall, the SI7336ADP-T1-E3 is engineered for efficiency and reliability in modern electronic circuits.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied here determines whether the device is on or off.
2. Drain (D): This pin is the output where the current flows out when the MOSFET is in the 'on' state.
3. Source (S): This pin is the input where current enters the MOSFET when it is conducting.
The device is a N-channel MOSFET, specifically designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in various electronic circuits. The pin count for this device is three, corresponding to the Gate, Drain, and Source.
Manufacturer
Application
Equivalent
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