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SI7450DP-T1-GE3
MOSFET N-CH 200V 3.2A PPAK SO-8
- 제조업체
- Mfr.부분 #SI7450DP-T1-GE3
- 패키지
- 데이터시트 SI7450DP-T1-GE3 DataSheet
- 재고 있음18610
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사양
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 3.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 80mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 42 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
Its key specifications include a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of up to 60A, allowing it to handle significant load conditions. The device typically has a fast switching speed, which enhances performance in fast-switching applications. Additionally, it comes in a compact TO-220 package, facilitating easy integration into various electronic designs.
The SI7450DP-T1-GE3 is characterized by its robustness and reliability, making it a popular choice among designers for applications requiring efficient power handling and thermal performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 50V, suitable for medium voltage applications.
2. Current Rating: The device can handle continuous drain currents of up to 50A, providing robust performance.
3. Low On-Resistance: With a typical Rds(on) of 8.0 mΩ at a gate-source voltage (Vgs) of 10V, it ensures minimal power loss during operation.
4. Fast Switching Speed: Designed for high-speed switching, making it ideal for applications like power converters and motor drives.
5. Thermal Performance: It features a TO-220 package that allows for efficient heat dissipation, enhancing reliability.
6. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, ensuring compatibility with standard logic levels.
7. Applications: Suitable for use in switching power supplies, DC-DC converters, and automotive applications.
This combination of features makes the SI7450DP-T1-GE3 a versatile choice for designers looking for a reliable power MOSFET.
Package
Pinout
Pin Functions:
1. Gate (G) - Controls the MOSFET's switching action; applies voltage to turn it on or off.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is turned on.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
The other pins may include various functional designations or may be used for thermal or mechanical purposes, depending on the specific package configuration. The SI7450DP-T1-GE3 features low R_DS(on) for reduced conduction losses and is suitable for applications in power management, DC-DC converters, and other efficiency-sensitive designs.
Manufacturer
Application
Equivalent
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