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SI7454DP-T1-E3
MOSFET N-CH 100V 5A PPAK SO-8
- 제조업체
- Mfr.부분 #SI7454DP-T1-E3
- 패키지
- 데이터시트
- 재고 있음18433
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사양
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | SI7454 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
The SI7454DP-T1-E3 is housed in a TO-220 package, facilitating efficient heat dissipation and making it ideal for applications like power supplies, motor drivers, and DC-DC converters. Its fast switching capabilities contribute to improved efficiency in power electronics. Additionally, it is RoHS-compliant, ensuring it meets environmental standards for hazardous substances. Overall, the SI7454DP-T1-E3 is a reliable choice for designers seeking efficient and compact solutions in power applications.
Features
1. Voltage Rating: It typically handles a drain-source voltage (V_DS) of up to 30V.
2. Current Handling: The device can efficiently manage continuous drain current (I_D) of around 60A, making it suitable for high-power applications.
3. R_DS(on): It offers low on-resistance (R_DS(on)), around 9.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power loss.
4. Gate Threshold Voltage (V_GS(th)): This MOSFET has a gate threshold voltage within the range of 1V to 2.5V, enabling it to operate effectively in low-voltage applications.
5. Fast Switching: The part is optimized for rapid switching speeds, suitable for applications like DC-DC converters and motor drivers.
6. Package Type: It comes in a DPAK package, allowing for effective thermal management and easy PCB integration.
This combination of features makes the SI7454DP-T1-E3 ideal for automotive, industrial, and consumer electronics applications.
Package
Pinout
Here are the pin functions:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The terminal that connects to ground or the lower potential in a circuit.
4. Body Diode (integrated) - Provides a path for reverse current, often used in switching applications.
The device is designed for low on-resistance and fast switching, making it efficient for various power applications. Always refer to the datasheet for detailed electrical characteristics and specific application guidelines.
Manufacturer
Application
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