SI7461DP-T1-GE3

The SI7461DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. It features a low on-resistance (Rds(on)) which minimizes power loss and enhances thermal performance, making it suitable for applications such as DC-DC converters, power supplies, and motor control. This MOSFET has a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) rating of up to 55A, allowing it to handle significant power loads.
The part is housed in a compact SO-8 package, facilitating space-efficient designs in modern electronics. It also supports fast switching speeds, contributing to improved performance in high-frequency applications. The SI7461DP-T1-GE3 is ideal for use in consumer electronics, automotive, and industrial applications, providing reliability and efficiency in power management solutions. Overall, it is a versatile component for engineers designing power circuits with stringent performance requirements.

The SI7461DP-T1-GE3 is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, suitable for a range of low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 62A at a temperature of 25°C, indicating high current handling capability.
3. R_DS(on): Low on-resistance of approximately 8.5 mΩ, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: Gate-source voltage (V_GS) threshold range of 1V to 2.5V, allowing for easy drive with low-voltage signals.
5. Fast Switching: Capable of high-speed switching which enhances performance in applications like DC-DC converters and motor drivers.
6. Thermal Management: Robust thermal characteristics with a high maximum junction temperature of 150°C, facilitating better heat dissipation.
7. Package Type: Offered in a SO-8 package, suitable for surface mount applications.
These features make the SI7461DP-T1-GE3 ideal for efficient power conversion and control in compact electronic circuits.

The SI7461DP-T1-GE3 is packaged in a SO-8 (Small Outline 8-lead) surface mount package. This compact package type is designed for efficient thermal performance and space-saving in electronic applications.

The SI7461DP-T1-GE3 is a power MOSFET from Silicon Labs with a total of 8 pins.
Pin Functions:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal where the current enters the MOSFET.
4. Additional Drain (D) - Allows for versatility in layout and connection.
5. Additional Source (S) - Also provides flexibility in connections and configurations.
The device features a N-channel configuration, designed for high efficiency in switching applications. It has a low on-resistance and can handle substantial amounts of current, making it suitable for various applications in power management and conversion.
For detailed specifications, refer to the manufacturer's datasheet.

The SI7461DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive components. The company, founded in 1962 and headquartered in Malvern, Pennsylvania, specializes in a wide range of electronic components used in various applications, including automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its innovation and extensive product portfolio, which includes diodes, resistors, capacitors, and MOSFETs, among others. The SI7461DP-T1-GE3 is a particular model of N-channel MOSFET, which is commonly used in power management and switching applications.

The SI7461DP-T1-GE3 is a N-channel MOSFET used in various applications, including power management, motor control, DC-DC converters, and switching power supplies. It is suitable for use in consumer electronics, automotive systems, and industrial automation due to its low on-resistance and fast switching capabilities, enabling efficient operation in compact designs.

The SI7461DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, IRLZ44N, and BSS138. For specific applications, check parameters like voltage rating, current rating, and RDS(on) to ensure compatibility. Always verify with manufacturer datasheets for precise electrical characteristics.