SI7463DP-T1-E3

The SI7463DP-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and performance in various electronic applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 60A, making it suitable for power switching applications.
Key specifications include a low on-resistance (R_DS(on)) of around 8.6 mΩ, which minimizes power losses during operation, enhancing overall system efficiency. This MOSFET has a fast switching speed, making it ideal for applications in power management, DC-DC converters, and motor control.
Additionally, it comes in a compact SO-8 package, allowing for easy integration into circuit designs with limited space. The device is also characterized by its thermal performance, with a junction-to-case thermal resistance that supports reliable operation at elevated temperatures.
Overall, the SI7463DP-T1-E3 is favored in industries where high power density and efficiency are crucial, such as consumer electronics, automotive, and industrial automation.

The SI7463DP-T1-E3 is a N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (I_D) up to 45A, allowing for significant power handling capabilities.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 10 mΩ at a gate-source voltage (V_GS) of 10V, which enhances efficiency by reducing power loss.
4. Fast Switching: The device is designed for fast switching speeds, making it effective in high-frequency applications.
5. Package Type: It comes in a compact SO-8 package, facilitating easy integration into various circuit designs.
6. Thermal Performance: The MOSFET has good thermal characteristics, allowing for reliable operation in demanding environments.
These features make the SI7463DP-T1-E3 suitable for applications in power supplies, motor drives, and automotive systems.

The SI7463DP-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package. This type of package is surface-mounted and features eight pins, making it compact and suitable for various electronic applications.

The SI7463DP-T1-E3 is a N-channel MOSFET from Vishay with a total of 8 pins. Its primary functions include:
1. Gate (G): Pin for controlling the MOSFET's on/off state.
2. Drain (D): Pin where the load connects; current flows from Drain to Source when the MOSFET is on.
3. Source (S): Pin connected to ground or the negative side of the power supply; current flows from Source to Drain when the MOSFET is on.
The SI7463DP-T1-E3 is designed for applications requiring efficient switching, such as power management and motor control. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency power conversion in various electronic applications.

The SI7463DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the discrete semiconductor and passive component markets. Founded in 1962, the company specializes in the design, manufacturing, and marketing of a wide range of electronic components, including resistors, capacitors, inductors, diodes, and MOSFETs. Vishay serves diverse industries such as automotive, industrial, computing, telecommunications, and consumer electronics, providing innovative solutions that enhance performance and efficiency. The SI7463DP-T1-E3 is a N-channel MOSFET, widely used in various applications due to its high efficiency and reliability.

The SI7463DP-T1-E3 is a N-channel MOSFET suitable for various applications, including power management, motor control, and DC-DC converters. It is commonly used in portable devices, battery management systems, and power supplies due to its low on-resistance and fast switching capabilities. Its compact package makes it ideal for space-constrained designs in consumer electronics and industrial applications.

The SI7463DP-T1-E3 is a N-channel MOSFET. Equivalent products include the IRF3205, AO3400, and BSS138, which may have similar voltage, current ratings, and specifications. However, always check the datasheets for exact parameters, such as R_DS(on), V_GS(th), and package type, to ensure compatibility for your specific application.