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SI7465DP-T1-E3
MOSFET P-CH 60V 3.2A PPAK SO-8
- 제조업체
- Mfr.부분 #SI7465DP-T1-E3
- 패키지 QFN8
- 데이터시트 SI7465DP-T1-E3 DataSheet
- 재고 있음6905
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 3.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 64mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
Key specifications include a low gate threshold voltage, fast switching capabilities, and a compact surface-mount package (SO-8), which aids in space-saving designs. Its robust performance characteristics and reliability make it an ideal choice for modern electronic applications where efficiency and thermal performance are crucial. The SI7465DP-T1-E3 is part of a larger family of MOSFETs that cater to varying power and efficiency needs across different industries.
Features
1. Low On-Resistance (RDS(on)): Offers low on-state resistance, enhancing efficiency and reducing heat generation during operation.
2. High Voltage Rating: Capable of handling drain-source voltages up to 30V, making it suitable for various applications.
3. Fast Switching Speed: Enables rapid turn-on and turn-off, which is essential for efficient switching applications.
4. Compact Package: Available in a DPAK package that saves PCB space and simplifies design layouts.
5. Thermal Performance: Designed with good thermal characteristics, allowing for effective heat dissipation.
6. Applications: Ideal for use in DC-DC converters, power management systems, and other applications requiring efficient switching.
These features make the SI7465DP-T1-E3 a versatile choice for engineers seeking reliable performance in power electronics.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The common terminal for the input and output connections.
4. Drain (D) - Additional drain pin, sometimes used for thermal management or redundancy.
The device features low on-resistance and fast switching speeds, making it suitable for high-efficiency applications. It is often used in circuits requiring low voltage drop and high current handling.
Manufacturer
Application
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