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SI7469DP-T1-E3
MOSFET P-CH 80V 28A PPAK SO-8
- 제조업체
- Mfr.부분 #SI7469DP-T1-E3
- 패키지 PowerPAK-SO-8
- 데이터시트 SI7469DP-T1-E3 DataSheet
- 재고 있음2880
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 25mOhm @ 10.2A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 160 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4700 pF @ 40 V |
| PowerDissipation(Max) | 5.2W (Ta), 83.3W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
The device is housed in a DPAK package, which provides excellent thermal performance and ease of handling. Its fast switching capabilities make it ideal for high-frequency applications, while the low gate charge promotes efficient driving with lower power losses. The SI7469DP-T1-E3 is also RoHS compliant, meeting environmental regulations for hazardous substances.
Overall, it is a reliable choice for designers seeking a versatile MOSFET to optimize their electronic circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Handling: It supports a continuous drain current (I_D) of up to 60A, allowing it to handle significant loads.
3. On-resistance: The device has a low on-resistance (R_DS(on)) of around 5.5 mΩ at a gate-source voltage (V_GS) of 10V, ensuring efficient power conduction and minimal heat generation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is between 1.0V to 2.5V, facilitating easy drive with low gate voltages.
5. Package: It is housed in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: It features fast switching capabilities, making it suitable for high-frequency applications.
Overall, the SI7469DP-T1-E3 is ideal for power supplies, motor drivers, and other power management circuits where efficiency and thermal performance are critical.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the conductivity between the drain and source.
2. Drain (D) - The terminal through which the current exits the device.
3. Source (S) - The terminal through which the current enters the device.
4. Body (B) - Internal connection to the source; typically not a separate pin.
Additional pins may include a tab or thermal pad for heat dissipation. The device is designed for low on-resistance and fast switching, making it suitable for high-efficiency applications. Refer to the manufacturer's datasheet for detailed specifications and characteristics.
Manufacturer
Application
Equivalent
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