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SI7938DP-T1-GE3
MOSFET 2N-CH 40V 60A PPAK SO8
- 제조업체
- Mfr.부분 #SI7938DP-T1-GE3
- 패키지
- 데이터시트
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사양
| Series | TrenchFET® |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 18.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 20V |
| Power - Max | 46W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Base Product Number | SI7938 |
개요
Description
This MOSFET is packaged in a compact surface-mount format, which aids in space-efficient design in modern electronics. Its compatibility with standard driving circuits ensures ease of integration into existing systems. Additionally, the SI7938DP-T1-GE3 is manufactured in accordance with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice for manufacturers. Overall, it is an optimal solution for applications requiring efficient switching performance, reliability, and compact design.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: Capable of handling continuous drain current up to 62A, which is ideal for high-current applications.
3. On-Resistance (RDS(ON)): Low on-resistance of approximately 7.4 mΩ at VGS = 10V, ensuring minimal power loss during operation.
4. Gate Voltage: Compatible with logic-level gate drive voltages, facilitating easy interfacing with microcontrollers.
5. Package Type: Available in a TO-220 package, providing good thermal performance and ease of heatsinking.
6. Fast Switching Speed: Designed for high-speed switching, which is important for applications like DC-DC converters and motor drives.
7. Thermal Resistance: Low thermal resistance for effective heat dissipation, enhancing reliability and performance.
These features make the SI7938DP-T1-GE3 suitable for applications in power supplies, automotive systems, and industrial control.
Package
Pinout
The specific pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connected to the load.
3. Source (S): Connected to ground or the negative side of the power supply.
The device features low on-resistance and fast switching capabilities, which enhance its efficiency in power applications. For detailed pin assignments and characteristics, refer to the manufacturer's datasheet.
Manufacturer
Application
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